METAL/METAL- AND METAL/CERAMIC INTERFACES PRODUCED BY MEANS OF A SURFACE ACTIVATION METHOD AT ROOM TEMPERATURE

1990 ◽  
pp. 189-195 ◽  
Author(s):  
T. SUGA ◽  
K. MIYAZAWA
Keyword(s):  
Room Temperature ◽  
Activation Method ◽  
Surface Activation ◽  
Metal Metal ◽  
Metal Ceramic ◽  
Ceramic Interfaces

Effect of Oxide Stabilizers and Surface Metallization on the Wetting Behaviour of Silver Based Brazing Alloys onto Zirconia Substrates for Oil Well Drill Bits Application

2012 ◽  
Vol 730-732 ◽  
pp. 191-196
Author(s):  
Jorge Carlos Pereira ◽  
Poliana Rochele Santos ◽  
João Moreno Silva ◽  
Rubens Maribondo Nascimento ◽  
Antonio Eduardo Martinelli
Keyword(s):  
Drilling Fluid ◽  
High Vacuum ◽  
Oil Well ◽  
Stabilized Zirconia ◽  
Well Drilling ◽  
Drill Bits ◽  
Metal Metal ◽  
Metal Ceramic ◽  
Drilling Operations ◽  
Ceramic Interfaces

Tricone drill bits with hard ceramic inserts are often used in oil well drilling operations. However, the cutting action and breakdown of the rock formation produces failures on the tricone bits, which mainly are related to wear, partial or total rupture of the drill bit body or ceramic inserts, thermal shock, and corrosion. Brazing is a well established technique to joint metal-metal, ceramic-ceramic and ceramic-metal materials. Wetting phenomena plays an essential role in the production of metal/ceramic interfaces if a liquid phase is present. Stabilized zirconia with yttria and magnesia can be an interesting material for hard ceramic inserts application on drill bits when oil well or the drilling fluid has acid characteristics. In this work, silver based brazing alloys were melted onto zirconia substrates under high vacuum. The effect of oxide stabilizers and the metallized surface on the wetting behaviour were studied. Better results were found for the yttria stabilized zirconia system using AgCu with 3% Ti as filler alloy.

The Role of Temperature and Substrate Pairing in the Tribochemistry of Phosphorus-Based Additives

2005 ◽  
Author(s):  
N. D. Spencer ◽  
R. Heuberger ◽  
J. Antifakos ◽  
A. Rossi
Keyword(s):  
Room Temperature ◽  
Environmentally Benign ◽  
Zinc Dialkyldithiophosphate ◽  
Metal Metal ◽  
Phosphorus Containing ◽  
Metal Ceramic ◽  
Steel Surfaces ◽  
Long Chain

The tribochemical mechanism of phosphorus-containing additives is important to understand, even if the ultimate aim is to replace them with something more environmentally benign. In a combinatorial experiment that explored a range of temperatures (RT-180°C), loads, two additives, and two substrate pairings, it was observed that zinc dialkyldithiophosphate (ZnDTP) reacted with steel surfaces to produce phosphate at room temperature, pyrophosphate at 130°C, and polyphosphate at 180°C. Metal-ceramic pairings did not seem to produce long-chain polyphosphates at 150°C. It was also observed that metal-metal pairings appear to benefit more from the presence of the additives than ceramic-metal pairings, which suggests that the role of the additives is largely to inhibit microwelding of the asperities across the sliding plane.

Comparison of Cu-MgO Interfaces Studied by EXES and XPS

1998 ◽  
Vol 05 (01) ◽  
pp. 369-373 ◽  
Author(s):  
P. Jonnard ◽  
C. Hombourger ◽  
F. Vergand ◽  
C. Bonnelle ◽  
B. Ealet ◽  
...  
Keyword(s):  
Emission Spectroscopy ◽  
Interatomic Distance ◽  
Room Temperature ◽  
X Ray ◽  
Buried Interfaces ◽  
Physicochemical Interactions ◽  
Densities Of States ◽  
Metal Ceramic ◽  
Copper Valence ◽  
Ceramic Interfaces

With the aim of studying the physicochemical interactions in metal-ceramic interfaces, we have investigated the Cu-MgO system. Two kinds of interfaces prepared at room temperature have been studied: interfaces during their formation (studied by X-ray photoelectron and Auger spectroscopies — XPS, AES) and buried interfaces (studied by electron-induced X-ray emission spectroscopy — EXES). Auger parameter results reveal a Cu(I) state for copper and point out, by comparison with the Cu-NaCl interface, that the oxidation comes from an interaction at the interface. EXES studies of the oxygen and copper valence densities of states evidence that the same kind of interaction exists at the interface between thick films of Cu and MgO and it does not exceed one interatomic distance.

Structure of AlAl and AlSi3N4 interfaces bonded at room temperature by means of the surface activation method

1992 ◽  
Vol 40 ◽  
pp. S133-S137 ◽  
Author(s):  
T. Suga ◽  
Y. Takahashi ◽  
H. Takagi ◽  
B. Gibbesch ◽  
G. Elssner
Keyword(s):  
Room Temperature ◽  
Activation Method ◽  
Surface Activation

A New Tailored UV Based Surface Activation Method for Bonding to Thermoplastics

2019 ◽  
Author(s):  
Sina Chaeichian ◽  
Kaspar Schaerer ◽  
Ruairi O’Kane ◽  
Michael Halbasch
Keyword(s):  
Activation Method ◽  
Surface Activation

Amorphous Films at Metal/Ceramic Interfaces

2003 ◽  
Vol 94 (3) ◽  
pp. 272-276 ◽  
Author(s):  
Amir Avishai ◽  
Christina Scheu ◽  
Wayne D. Kaplan
Keyword(s):  
Amorphous Films ◽  
Metal Ceramic ◽  
Ceramic Interfaces

Interface Electronic And Magnetic Structures Of Layered Fe In Contact With MgO

1991 ◽  
Vol 238 ◽  
Author(s):  
Young Keun Kim ◽  
Michael E. McHenry ◽  
Manuel P. Oliveria ◽  
Mark E. Eberhart
Keyword(s):  
First Principles ◽  
State Of The Art ◽  
Magnetic Moments ◽  
Magnetic Structures ◽  
Consistent Field ◽  
Structure Of Metal ◽  
Metal Ceramic ◽  
Layer Technique ◽  
Self Consistent Field ◽  
Ceramic Interfaces

ABSTRACTA model based on the state-of-the-art, first-principles layer Korringa-Kohn-Rostoker (LKKR) method has proven to be very effective in describing the electronic and magnetic structure of metal/ceramic interfaces. We have performed self-consistent field computations incorporating spin polarization both for Fe/MgO superlattice (bulk technique) and for MgO/Fe/MgO sandwich (layer technique) systems. Muffin-tin potentials were employed for both materials in our computations. Iron layer was embedded in MgO, the host material, to have a [110](100)Fe / [100](100)MgO contact configuration. A large enhancement of magnetic moments has been found at the interface.

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