Optical investigation of atomic steps in ultrathin InGaAs/InP quantum wells grown by vapor levitation epitaxy

1989 ◽  
Vol 54 (5) ◽  
pp. 442-444 ◽  
Author(s):  
P. C. Morais ◽  
H. M. Cox ◽  
P. L. Bastos ◽  
D. M. Hwang ◽  
J. M. Worlock ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Investigation ◽  
Atomic Steps

Optical investigation of the relaxation process in InGaAs/GaAs single strained quantum wells grown on (001) and (111)B GaAs substrates

1999 ◽  
Vol 30 (4-5) ◽  
pp. 363-366 ◽  
Author(s):  
J.J. Sánchez ◽  
J.M.G. Tijero ◽  
J. Hernando ◽  
J.L. Sánchez-Rojas ◽  
I. Izpura
Keyword(s):  
Quantum Wells ◽  
Relaxation Process ◽  
Optical Investigation ◽  
Strained Quantum Wells ◽  
Gaas Substrates

Optical investigation of interdiffusion in CdTe/CdMnTe quantum wells

1993 ◽  
Vol 21 (2-3) ◽  
pp. 274-276 ◽  
Author(s):  
D. Tönnies ◽  
G. Bacher ◽  
A. Forchel ◽  
A. Waag ◽  
G. Landwehr
Keyword(s):  
Quantum Wells ◽  
Optical Investigation

Atomically Abrupt and Smooth Heterointerfaces: An Optical Investigation

1990 ◽  
Vol 198 ◽  
Author(s):  
Colin A. Warwick ◽  
William Y. Jan ◽  
Abbas Ourmazd ◽  
Timothy D. Harris ◽  
JÜdrgen Christen
Keyword(s):  
Quantum Wells ◽  
Luminescence Spectra ◽  
Optical Investigation ◽  
Photoluminescence Excitation ◽  
Lattice Imaging ◽  
Island Size ◽  
Full Characterization ◽  
Imaging Results ◽  
Relevant Length Scale

ABSTRACTLuminescence spectra from quantum wells are routinely interpreted in terms of atomically smooth and atomically abrupt interfaces. Here we show that this interpretation is inconsistent with photoluminescence, photoluminescence excitation, and quantitative microscopic (chemical lattice imaging) results. We argue that the discussion of interfacial roughness in terms of “an island size” is too naive. A full characterization of an interface requires the description of a “roughness spectrum”, specifying the amplitude of the interfacial corrugation vs corrugation wavelength over the relevant length scale.

Optical investigation of highly strained InGaAs‐GaAs multiple quantum wells

1987 ◽  
Vol 62 (8) ◽  
pp. 3366-3373 ◽  
Author(s):  
G. Ji ◽  
D. Huang ◽  
U. K. Reddy ◽  
T. S. Henderson ◽  
R. Houdré ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Optical Investigation ◽  
Highly Strained

Growth and optical investigation of quaternary quantum wells

1996 ◽  
Vol 40 (1-8) ◽  
pp. 143-147 ◽  
Author(s):  
S.C. Shen ◽  
W.Z. Shen ◽  
W.G. Tang ◽  
Y. Zhao ◽  
A.Z. Li
Keyword(s):  
Quantum Wells ◽  
Optical Investigation

Optical investigation of CdTe monomolecular islands in wide ZnTe/(Zn,Mg)Te quantum wells: Evidence of a vertical self-ordering

1997 ◽  
Vol 56 (7) ◽  
pp. 3907-3912 ◽  
Author(s):  
Pierre Lefebvre ◽  
Vincent Calvo ◽  
Noël Magnea ◽  
Thierry Taliercio ◽  
Jacques Allègre ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Investigation

Optical investigation of confinement and strain effects in CdTe/(CdMg)Te quantum wells

1993 ◽  
Vol 63 (21) ◽  
pp. 2932-2934 ◽  
Author(s):  
B. Kuhn‐Heinrich ◽  
W. Ossau ◽  
H. Heinke ◽  
F. Fischer ◽  
T. Litz ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Investigation ◽  
Strain Effects
Sign in / Sign up

Export Citation Format

Share Document