Exchange bias and magneto-resistance in an all-oxide spin valve with multi-ferroic BiFeO3 as the pinning layer

2013 ◽  
Vol 61 (19) ◽  
pp. 7444-7453 ◽  
Author(s):  
Wei-Jui Lin ◽  
Wei-Che Chang ◽  
Xiaoding Qi
Keyword(s):  
Exchange Bias ◽  
Spin Valve ◽  
Magneto Resistance

scholarly journals Enhanced spin-valve giant magneto-resistance in non-exchange biased sandwich films

2000 ◽  
Vol 36 (5) ◽  
pp. 2866-2868 ◽  
Author(s):  
M. Mao ◽  
C. Cerjan ◽  
B. Law ◽  
F. Grabner ◽  
L. Miloslavsky ◽  
...  
Keyword(s):  
Spin Valve ◽  
Magneto Resistance

Effect of nano oxide layer on exchange bias and GMR in Mn–Ir–Pt based spin valve

2004 ◽  
Vol 272-276 ◽  
pp. 1903-1904 ◽  
Author(s):  
D.M. Jeon ◽  
J.P. Lee ◽  
D.H. Lee ◽  
S.Y. Yoon ◽  
Y.S. Kim ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Exchange Bias ◽  
Spin Valve ◽  
Nano Oxide

Spin-valve giant magneto-resistance film with magnetostrictive FeSiB amorphous layer and its application to strain sensors

2018 ◽  
Vol 123 (11) ◽  
pp. 113903 ◽  
Author(s):  
Y. Hashimoto ◽  
N. Yamamoto ◽  
T. Kato ◽  
D. Oshima ◽  
S. Iwata
Keyword(s):  
Spin Valve ◽  
Amorphous Layer ◽  
Strain Sensors ◽  
Magneto Resistance

scholarly journals Exchange bias and bistable magneto-resistance states in amorphous TbFeCo thin films

2016 ◽  
Vol 108 (1) ◽  
pp. 012401 ◽  
Author(s):  
Xiaopu Li ◽  
Chung T. Ma ◽  
Jiwei Lu ◽  
Arun Devaraj ◽  
Steven R. Spurgeon ◽  
...  
Keyword(s):  
Thin Films ◽  
Exchange Bias ◽  
Magneto Resistance

Influence of nano-oxide layer on the giant magnetoresistance and exchange bias of NiMn/Co/Cu/Co spin valve sensors

2010 ◽  
Vol 107 (9) ◽  
pp. 093910 ◽  
Author(s):  
Anoop Gupta ◽  
Senthilnathan Mohanan ◽  
Michael Kinyanjui ◽  
Andrey Chuvilin ◽  
Ute Kaiser ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Exchange Bias ◽  
Giant Magnetoresistance ◽  
Spin Valve ◽  
Nano Oxide

MgO based specular spin valve with reversible minor loop and higher exchange bias for futuristic linear magnetic field sensor

2019 ◽  
Vol 486 ◽  
pp. 165292
Author(s):  
P.V. Sreevidya ◽  
Umesh P. Borole ◽  
Tejaswini Gawade ◽  
Jakeer Khan ◽  
C.L. Prajapat ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Exchange Bias ◽  
Spin Valve ◽  
Magnetic Field Sensor ◽  
Minor Loop ◽  
Field Sensor

Spin configurations and interfacial diffusion in exchange bias and spin valve systems with Ir–Mn antiferromagnetic pinning layers

2009 ◽  
Vol 191 (1-3) ◽  
pp. 135-141 ◽  
Author(s):  
V. Kuncser ◽  
G. Schinteie ◽  
P. Palade ◽  
I. Mustata ◽  
C. P. Lungu ◽  
...  
Keyword(s):  
Exchange Bias ◽  
Spin Valve ◽  
Interfacial Diffusion

Preparation of Lateral Organic Spin-valve Devices with La0.7Sr0.3MnO3

2007 ◽  
Vol 1033 ◽  
Author(s):  
Tomonori Ikegami ◽  
Iwao Kawayama ◽  
Masayoshi Tonouchi ◽  
Yoshiro Yamashita ◽  
Hirokazu Tada
Keyword(s):  
Organic Semiconductors ◽  
Spin Injection ◽  
Spin Valve ◽  
Epitaxial Films ◽  
Organic Films ◽  
Low Molecular Weight ◽  
Applied Bias ◽  
Metal Electrodes ◽  
Half Metal ◽  
Magneto Resistance

AbstractSpin injection and transport characteristics of low-molecular-weight organic semiconductors such as pentacene and bis(l,2,5-thiadiazolo)-p-quinobis(l,3-dithiole) (BTQBT) have been studied utilizing lateral type spin-valve devices with half metal electrodes, LaA0.67Sr0.33MnO3 (LSMO). The LSMO electrodes with a spacing of 200 nm were prepared by electron-beam lithography and dry etching of the epitaxial films grown on MgO substrates. The devices showed clear spin-valve behaviors with a magneto-resistance (MR) ratio up to 29 % at 9.1K. It was found that the MR ratio depended on the crystallinity of organic films as well as on temperature and applied bias voltages

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