Effect of nano oxide layer on exchange bias and GMR in Mn–Ir–Pt based spin valve

2004 ◽  
Vol 272-276 ◽  
pp. 1903-1904 ◽  
Author(s):  
D.M. Jeon ◽  
J.P. Lee ◽  
D.H. Lee ◽  
S.Y. Yoon ◽  
Y.S. Kim ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Exchange Bias ◽  
Spin Valve ◽  
Nano Oxide

Influence of nano-oxide layer on the giant magnetoresistance and exchange bias of NiMn/Co/Cu/Co spin valve sensors

2010 ◽  
Vol 107 (9) ◽  
pp. 093910 ◽  
Author(s):  
Anoop Gupta ◽  
Senthilnathan Mohanan ◽  
Michael Kinyanjui ◽  
Andrey Chuvilin ◽  
Ute Kaiser ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Exchange Bias ◽  
Giant Magnetoresistance ◽  
Spin Valve ◽  
Nano Oxide

Magnetoimpedance behavior and its equivalent circuit analysis of Co/Cu/Co/Py pseudo-spin-valve with a nano-oxide layer

2009 ◽  
Vol 105 (3) ◽  
pp. 033915 ◽  
Author(s):  
Wei-Chih Chien ◽  
Yeong-Der Yao ◽  
Jiann-Kuo Wu ◽  
Chi-Kuen Lo ◽  
Ruei-Feng Hung ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Oxide Layer ◽  
Spin Valve ◽  
Circuit Analysis ◽  
Equivalent Circuit Analysis ◽  
Nano Oxide

Nano-oxide layer and magnetic properties in Mn–Ir–Pt-based spin valve multilayers

2005 ◽  
Vol 475 (1-2) ◽  
pp. 243-245 ◽  
Author(s):  
D.M. Jeon ◽  
J.P. Lee ◽  
D.H. Lee ◽  
S.Y. Yoon ◽  
J.H. Kim ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Oxide Layer ◽  
Spin Valve ◽  
Nano Oxide

Nano-Oxide-Layer-Induced Magnetic Properties of Ir-Mn-Based Spin-Valve Field Sensors

2016 ◽  
Vol 7 ◽  
pp. 1-5
Author(s):  
Manish Kumar Srivastava ◽  
Kuo-Feng Huang ◽  
Hsin-Hung Huang ◽  
Rex Weng ◽  
Way-Faung Pong ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Oxide Layer ◽  
Spin Valve ◽  
Nano Oxide

Insertion of a Specular Reflective and Transmissive Nano-Oxide Layer into Giant Magnetoresistance Spin-Valve Structure

2006 ◽  
Vol 6 (11) ◽  
pp. 3483-3486 ◽  
Author(s):  
Chunghee Nam ◽  
Youngman Jang ◽  
Ki-Su Lee ◽  
Jungjin Shim ◽  
B. K. Cho
Keyword(s):  
Oxide Layer ◽  
Giant Magnetoresistance ◽  
Spin Valve ◽  
Nano Oxide ◽  
Valve Structure

Thermally stable MnIr based spin valve type tunnel junction with nano-oxide layer over 400°C

2004 ◽  
Vol 110 (3) ◽  
pp. 265-267 ◽  
Author(s):  
S.Y Yoon ◽  
Y.I Kim ◽  
D.H Lee ◽  
Y.S Kim ◽  
D.H Yoon ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Tunnel Junction ◽  
Spin Valve ◽  
Thermally Stable ◽  
Nano Oxide

Nano-Oxide Layer Formed on Ruthenium of Synthetic Pinned-Structure Spin Valve by Ion Beam and Cluster Ion Beam Oxidation

2004 ◽  
Vol 40 (4) ◽  
pp. 2203-2205 ◽  
Author(s):  
C.-C. Hu ◽  
M. Mao ◽  
A.J. Devasahayam ◽  
C.-L. Lee ◽  
J.C.S. Kools ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Ion Beam ◽  
Spin Valve ◽  
Nano Oxide ◽  
Cluster Ion

Insertion of a Specular Reflective and Transmissive Nano-Oxide Layer into Giant Magnetoresistance Spin-Valve Structure

2006 ◽  
Vol 6 (11) ◽  
pp. 3483-3486
Author(s):  
Chunghee Nam ◽  
Youngman Jang ◽  
Ki-Su Lee ◽  
Jungjin Shim ◽  
B. K. Cho
Keyword(s):  
Oxide Layer ◽  
Sheet Resistance ◽  
Giant Magnetoresistance ◽  
Spin Valve ◽  
Interlayer Coupling ◽  
Free Layer ◽  
Uniform Layer ◽  
Nano Oxide ◽  
Valve Structure ◽  
Current Shunt

We have studied the influence of the insertion of a nano-oxide layer (NOL) into a magnetic GMR spin-valve. It was found that the spin-valve with NOL has a higher GMR ratio than that of the normal spin-valve without NOL. Naturally formed NOL without vacuum break shows a uniform layer, which effectively suppresses the current shunt, resulting in the reduction of the sheet resistance of GMR. The NOL spin-valve also shows a lower interlayer coupling (Hin) than that of the optimal normal spin-valve, which is consistent with AFM measurement showing lower roughness of NOL formed CoFe surface. Based on the advantage of NOL, we succeeded in lowering Hin while maintaining GMR ratio by insertion of NOL inside the CoFe free layer, where the free layer consists of CoFe/NOL/CoFe/NOL/Capping layer.

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