Robust ferromagnetic insulating and large exchange bias in LaMnO3:CoO composite thin films

Ferromagnetic insulators have received widespread attention for applications in novel low power consumption spintronic devices. Further optimizing the robust ferromagnetic insulating and developing multifunctional ferromagnetic insulator by integrating other magnetic property can not only ease or pave the way for actual application, but also provide an additional freedom degree for device designing. In this work, by introducing antiferromagnetic CoO into ferromagnetic insulator LaMnO3, we have constructed (1-x)LaMnO3:xCoO composite thin films. The films simultaneously show robust ferromagnetic insulator characteristics and large exchange bias. For x = 0.5 sample, the resistivity is 120 Ω·cm at 250 K while the magnetization is 100 emu/cm3 and the exchange bias field is -2200 Oe at 10 K. Especially, the blocking temperature is up to 140 K. Synchrotron radiation x-ray absorption spectroscopy reveals the coexistence of Mn3+, Mn2+, Co2+ and Co3+, arising from interfacial charge transfer and space charge/defect trapping, should be responsible for the enhanced and integrated multifunctional magnetic properties.

The positive exchange bias property with hopping switching behavior in van der Waals magnet FeGeTe

The magnetic exchange bias effect is one of the representative interlayer magnetic coupling phenomena and is widely utilized in numerous technological applications. However, its mechanism is still elusive even in a simple magnetic bilayered system because of the complex interface magnetic orders. Van der Waals layered magnetic materials may provide an essential platform for deeply understanding the detailed mechanism of the exchange bias owing to its ideal interface structure. Here we first observed the positive exchange-biased anomalous Hall effect (AHE) with a hopping switching behavior in the FeGeTe Van der Waals nano-flakes. After systemically studying the cooling field dependence properties of the exchange bias effect, we propose that the coexistence of stable and frustrated surface magnetization of the antiferromagnetic phase will modify the total interface coupling energy density between the ferromagnetic (FM) and antiferromagnetic (AFM) phases. This model could provide a consistent description for such unusual exchange bias effect based on microspin simulation.