Microstructure and electrical properties of Mn-doped barium strontium titanate thin films prepared on copper foils

2010 ◽  
Vol 256 (22) ◽  
pp. 6531-6535 ◽  
Author(s):  
Yanhua Fan ◽  
Shuhui Yu ◽  
Rong Sun ◽  
Lei Li ◽  
Yansheng Yin ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Copper Foils ◽  
Barium Strontium ◽  
Mn Doped

LS-MOCVD of BSTO Thin Films Using Novel Ba and Sr Precursors

2003 ◽  
Vol 765 ◽  
Author(s):  
Hyun Goo Kwon ◽  
Youngwoo Oh ◽  
Jung Woo Park ◽  
Young Kuk Lee ◽  
Chang Gyoun Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Smooth Surface ◽  
Annealing Temperature ◽  
Dielectric Constants ◽  
Working Pressure ◽  
Barium Strontium ◽  
Ethyl Amine

AbstractWe report the synthesis of new precursors Ba(thd)2(tmeea) and Sr(thd)2(tmeea), where tmeea = tris[2-(2-methoxyethoxy)ethyl]amine, and the LS-MOCVD of barium strontium titanate (BSTO) thin films using these precursors. Thin films of BSTO were grown on Pt(111)/SiO2/Si(100) substrates by LS-MOCVD using the cocktail source consisting of the conventional Ti precursor Ti(thd)2(OiPr)2 and the new Ba and Sr precursors. As-grown films were characterized by SEM, XRD, XRF, and C-V measurement. BSTO films grown at 420°C were stoichiometric barium strontium titanate with very smooth surface morphology and their dielectric constants were found to be as large as 320. The dependence of composition, microstructure and the electrical properties of the BSTO films on the growth temperature, annealing temperature, and working pressure will be discussed.

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