Improvement of Crystal Quality of AlN Films with Different Polarities by Annealing at High Temperature

High-quality AlN film is a key factor affecting the performance of deep-ultraviolet optoelectronic devices. In this work, high-temperature annealing technology in a nitrogen atmosphere was used to improve the quality of AlN films with different polarities grown by magnetron sputtering. After annealing at 1400–1650 °C, the crystal quality of the AlN films was improved. However, there was a gap between the quality of non-polar and polar films. In addition, compared with the semi-polar film, the quality of the non-polar film was more easily improved by annealing. The anisotropy of both the semi-polar and non-polar films decreased with increasing annealing temperature. The results of Raman spectroscopy, scanning electron microscopy and X-ray photoelectron spectroscopy revealed that the annihilation of impurities and grain boundaries during the annealing process were responsible for the improvement of crystal quality and the differences between the films with different polarities.

Functional Properties of Donor (Al) and Acceptor (Cu) Codoped High Dielectric Constant ZnO Nanoparticles

In this work, we have synthesized donor-acceptor (Al-Cu) codoped ZnO nanoparticles with a doping concentration of 0%, 0.25%, 0.5%, and 0.75% by coprecipitation method. The synthesized samples were then annealed at 350°C and 600°C. All the samples showed wurtzite structure of ZnO with no secondary phase. The increase in doping concentration led to deterioration of crystalline quality, while improved crystallinity was observed at higher annealing temperature. The morphological study of these samples showed good grain-to-grain contact with less isolated pores. These samples were further characterized by impedance spectroscopy for analyzing dielectric properties. The values of the real part of dielectric constant and tangent loss showed decreasing trend with frequency. The appearance of semicircular arcs in the impedance complex plane plots indicates contribution of grains and grain boundaries and presence of different relaxation processes. 0.5% Al and Cu codoped ZnO showed the best dielectric response with a high value of dielectric constant and low tangent loss.

Homogenization Modes Effect on Mechanical Properties and Corrosive Characteristics of the Rolled Products from Al-Mg (1570) Aluminum Alloy with Addition of Scandium and Zirconium

Objective of the study: study of various homogenization modes effects on mechanical and corrosive properties of rolled sheets from Al-Mg system alloy 1570 with additions of zirconium and scandium transition metals. The sheets were produced in laboratory conditions from the ingot, cast in production DC mold based on the commercial production practices and treatment modes. 4 homogenization modes, 2 tempers H12 and H321, and several modes of stabilization annealing in the temperature range from 240 °C to 325 °C have been reviewed. The samples have been comprehensively examined using optic and electron scanning microscope, mechanical properties were achieved by break test in compliance with ISO 6892-1, corrosion was examined using ASTM G66 and G67 standards. The curve of 1570 alloy sheets softening as the function of annealing temperature was constructed. It was demonstrated that the increasing temperature effect during homogenization leads to strength properties decrease and corrosion resistance improvement due to interdendritic segregation elimination. Among analyzed homogenization modes, 360 - 380 °C - 6 h mode is established as the most practical, and the sheets. produced without stabilization annealing, occurred to be the most resistant to exfoliation corrosion. The sheets, subjected to annealing at 260 °C - 2 h, show no traces of layer corrosion, but have pit corrosion locations rated as «PC» based on ASTM G-66 classification, such rating is unacceptable for the manufacture of products for use in the marine environment.

Effect of Homogenization Annealing on Wear Properties of Thixo-Extrued Copper Alloy

The semi-solid extruded CuSn10P1 alloy bushings were homogenization annealed. The effects of annealing process on the hardness and wear properties of bushings were researched. The results show the Brinell hardness increases firstly and then decreases with the increase of annealing temperature and annealing time. With the annealing temperature increasing, the grinding loss rate and friction factor decrease firstly and then increase. At the annealing time of 120 min, the grinding loss rate decreases from 7% at the annealing temperature of 450 °C to 6% at 500 °C, and then increases from 6% at 500 °C to 12% at 600 °C. The friction factor decreases from 0.54 to 0.48 and then increases to 0.83. At the annealing temperature of 500 °C, the grinding loss rate decreases from 11% at the annealing time of 60 min to 6% at 120 min, and then increases to 15% at 150 min. The friction factor decreases from 0.67 to 0.48 and then increases to 0.72. The best wear performance and Brinell hardness can be obtained at annealing temperature of 500 °C for 120 min.

Annealing Effect on One Step Electrodeposited CuSbSe2 Thin Films

The purpose of this work is to study the influence of the annealing temperature on the structural, morphological, compositional and optical properties of CuSbSe2 thin films electrodeposited in a single step. CuSbSe2 thin films were grown on fluorine-doped tin oxide (FTO)/glass substrates using the aqueous electrodeposition technique, then annealed in a tube furnace under nitrogen at temperatures spanning from 250 to 500 °C. The resulting films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis, Raman spectroscopy and UV-Vis spectrophotometer. The annealing temperature plays a fundamental role on the films structural properties; in the range 250–350 °C the formation of pure CuSbSe2 phase from electrodeposited binary selenides occurs. From 400 to 500 °C, CuSbSe2 undergoes a preferential phase orientation change, as well as the increasing formation of copper-rich phases such as Cu3SbSe3 and Cu3SbSe4 due to the partial decomposition of CuSbSe2 and to the antimony losses.