Effect of deposition temperature on orientation and electrical properties of (K0.5Na0.5)NbO3 thin films by pulsed laser deposition

2012 ◽  
Vol 258 (7) ◽  
pp. 2674-2678 ◽  
Author(s):  
Aifen Tian ◽  
Wei Ren ◽  
Lingyan Wang ◽  
Peng Shi ◽  
Xiaofeng Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Pulsed Laser Deposition ◽  
Deposition Temperature ◽  
Pulsed Laser ◽  
Laser Deposition

Influence of oxygen pressure on the electrical properties of Mn-doped Bi0.5Na0.5TiO3BaTiO3 thin films by pulsed laser deposition

2019 ◽  
Vol 45 (10) ◽  
pp. 13518-13522 ◽  
Author(s):  
Shan Jiao ◽  
Yi Zhang ◽  
Zhihua Duan ◽  
Tao Wang ◽  
Yanxue Tang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Mn Doped

Highly Conductive and Optically Transparent Polycrystalline Iridium Oxide Thin Films Grown by Reactive Pulsed Laser Deposition

1997 ◽  
Vol 472 ◽  
Author(s):  
M.A. El Khakani ◽  
M. Chaker
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Deposition Temperature ◽  
Room Temperature ◽  
Optical Transmission ◽  
Ambient Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Structure Morphology ◽  
Quartz Substrates

ABSTRACTReactive pulsed laser deposition has been used to deposit IrO2 thin films on both SiO2 and fused quartz substrates, by ablating a metal iridium target in oxygen atmosphere. At a KrF laser intensity of about 1.7 × 109 W/cm2, IrO2 films were deposited at substrate deposition temperatures ranging from room-temperature to 700 °C under an optimum oxygen ambient pressure of 200 mTorr. The structure, morphology, electrical resistivity and optical transmission of the deposited films were characterized as a function of their deposition temperature (Td). High quality IrO2 films are obtained in the 400–600 °C deposition temperature range. They are polycrystalline with preferred orientations, depending on the substrate, and show a dense granular morphology. At a Td as low as 400 °C, highly conductive IrO2 films with room-temperature resistivities as low as (42±6) μΩ cm are obtained. Over the 300–600 °C Td range, the IrO2 films were found to exhibit a maximum optical transmission at 450 °C (∼ 45 % at 500 nm for 80 nm-thick films).

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