Thermal radiative properties of carbon materials under high temperature and vacuum ultra-violet (VUV) radiation for the heat shield of the Solar Probe Plus mission

2012 ◽  
Vol 258 (7) ◽  
pp. 2829-2835 ◽  
Author(s):  
M. Balat-Pichelin ◽  
J. Eck ◽  
J.L. Sans
Optik ◽  
2011 ◽  
Vol 122 (22) ◽  
pp. 2050-2054 ◽  
Author(s):  
Jebreel M. Khoshman ◽  
Martin E. Kordesch

Solar Energy ◽  
1979 ◽  
Vol 22 (1) ◽  
pp. 37-43 ◽  
Author(s):  
C.K. Hsieh ◽  
K.C. Su

1995 ◽  
Vol 387 ◽  
Author(s):  
Peter Y. Wong ◽  
Ioannis N. Miaoulis ◽  
Cynthia G. Madras

AbstractTemperature measurements and processing uniformity continue to be major issues in Rapid Thermal Processing. Spatial and temporal variations in thermal radiative properties of the wafer surface are sources of non-uniformities and dynamic variations. These effects are due to changes in spectral distribution (wafer or heat source), oxidation, epitaxy, silicidation, and other microstructural transformations. Additionally, other variations are induced by the underlying (before processing) and developing (during processing) patterns on the wafer. Numerical simulations of Co silicidation that account for these factors are conducted to determine the radiative properties, heat transfer dynamics, and resultant processing uniformity.


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