Employing Monte-Carlo simulations we investigate effects of an electric field on electron kinetics and transport in quantum-dot structures with potential barriers created around dots via intentional or unintentional doping. Results of our simulations demonstrate that the photoelectron capture is substantially enhanced in strong electric fields and this process has an exponential character. Detailed analysis shows that effects of the electric field on electron capture in the structures with barriers are not sensitive to the redistribution of electrons between valleys and these effects are not related to an increase of drift velocity. Most data find adequate explanation in the model of hot-electron transport in the potential relief of quantum dots. Electron kinetics controllable by potential barriers and an electric field may provide significant improvements in the photoconductive gain, detectivity, and responsivity of photodetectors.
HOT-ELECTRON TRANSPORT IN QUANTUM-DOT PHOTODETECTORS
