scholarly journals Quantum Calculations on the Transport of Protons in the Voltage Sensing Domain of the Kv1.2 Potassium Channel: Multiple Paths, Charged Groups, and a Switch

2021 ◽  
Vol 120 (3) ◽  
pp. 240a
Author(s):  
Michael E. Green
Keyword(s):  
Potassium Channel ◽  
Quantum Calculations ◽  
Voltage Sensing ◽  
Multiple Paths ◽  
Voltage Sensing Domain

Quantum Calculation of Proton and Other Charge Transfer Steps in Voltage Sensing in the Kv1.2 Channel

2019 ◽  
Author(s):  
Alisher M Kariev ◽  
Michael Green
Keyword(s):  
Charge Transfer ◽  
Energy Charge ◽  
Quantum Calculation ◽  
Quantum Calculations ◽  
Gating Current ◽  
Transmembrane Segment ◽  
Voltage Sensing ◽  
Standard Models ◽  
Charge Displacement ◽  
Voltage Sensing Domain

Quantum calculations on 976 atoms of the voltage sensing domain of the K<sub>v</sub>1.2 channel, with protons in several positions, give energy, charge transfer, and other properties. Motion of the S4 transmembrane segment that accounts for gating current in standard models is shown not to occur; there is H<sup>+ </sup>transfer instead. The potential at which two proton positions cross in energy approximately corresponds to the gating potential for the channel. The charge displacement seems approximately correct for the gating current. Two mutations are accounted for (Y266F, R300cit, cit =citrulline). The primary conclusion is that voltage sensing depends on H<sup>+</sup> transfer, not motion of arginine charges.

NMR Structural and Dynamical Investigation of the Isolated Voltage-Sensing Domain of the Potassium Channel KvAP: Implications for Voltage Gating

2010 ◽  
Vol 132 (16) ◽  
pp. 5630-5637 ◽  
Author(s):  
Zakhar O. Shenkarev ◽  
Alexander S. Paramonov ◽  
Ekaterina N. Lyukmanova ◽  
Lyudmila N. Shingarova ◽  
Sergei A. Yakimov ◽  
...  
Keyword(s):  
Potassium Channel ◽  
Voltage Gating ◽  
Voltage Sensing ◽  
Voltage Sensing Domain

scholarly journals Down-State Model of the Voltage-Sensing Domain of a Potassium Channel

2010 ◽  
Vol 98 (12) ◽  
pp. 2857-2866 ◽  
Author(s):  
Eric V. Schow ◽  
J. Alfredo Freites ◽  
Karun Gogna ◽  
Stephen H. White ◽  
Douglas J. Tobias
Keyword(s):  
Potassium Channel ◽  
State Model ◽  
Voltage Sensing ◽  
Voltage Sensing Domain

scholarly journals A potassium Channel Voltage-Sensing Domain in a Non-Phospholipid Bilayer

2011 ◽  
Vol 100 (3) ◽  
pp. 282a
Author(s):  
Harindar S. Keer ◽  
J. Alfredo Freites ◽  
Stephen H. White ◽  
Douglas J. Tobias
Keyword(s):  
Potassium Channel ◽  
Phospholipid Bilayer ◽  
Voltage Sensing ◽  
Voltage Sensing Domain

scholarly journals Quantum Calculation of Proton and Other Charge Transfer Steps in Voltage Sensing in the Kv1.2 Channel

2019 ◽  
Author(s):  
Alisher M Kariev ◽  
Michael Green
Keyword(s):  
Charge Transfer ◽  
Energy Charge ◽  
Quantum Calculation ◽  
Quantum Calculations ◽  
Gating Current ◽  
Transmembrane Segment ◽  
Voltage Sensing ◽  
Standard Models ◽  
Charge Displacement ◽  
Voltage Sensing Domain

Quantum calculations on 976 atoms of the voltage sensing domain of the K<sub>v</sub>1.2 channel, with protons in several positions, give energy, charge transfer, and other properties. Motion of the S4 transmembrane segment that accounts for gating current in standard models is shown not to occur; there is H<sup>+ </sup>transfer instead. The potential at which two proton positions cross in energy approximately corresponds to the gating potential for the channel. The charge displacement seems approximately correct for the gating current. Two mutations are accounted for (Y266F, R300cit, cit =citrulline). The primary conclusion is that voltage sensing depends on H<sup>+</sup> transfer, not motion of arginine charges.

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