Electrical properties and energy-storage performance of (Pb 0.92 Ba 0.05 La 0.02 )(Zr 0.68 Sn 0.27 Ti 0.05 )O 3 antiferroelectric thick films prepared by tape-casing method

2016 ◽  
Vol 42 (11) ◽  
pp. 12537-12542 ◽  
Author(s):  
Liming Chen ◽  
Yong Li ◽  
Qiwei Zhang ◽  
Xihong Hao
Keyword(s):  
Energy Storage ◽  
Electrical Properties ◽  
Thick Films ◽  
Storage Performance ◽  
Antiferroelectric Thick Films

Effects of thickness on the microstructure and energy-storage performance of PLZT antiferroelectric thick films

2013 ◽  
Vol 03 (03) ◽  
pp. 1350021 ◽  
Author(s):  
Ningning Sun ◽  
Ying Wang ◽  
Liwen Zhang ◽  
Xuefeng Zhang ◽  
Xihong Hao ◽  
...  
Keyword(s):  
Energy Storage ◽  
Thick Films ◽  
Electrical Measurement ◽  
Maximum Energy ◽  
X Ray Diffraction ◽  
Storage Performance ◽  
Saturation Polarization ◽  
Measurement Results ◽  
Good Energy ◽  
Antiferroelectric Thick Films

The typical antiferroelectric (AFE) thick films Pb 0.94 La 0.04( Zr 0.98 Ti 0.02) O 3 (PLZT 4/98/2) with different thicknesses of 2, 4, 6 and 10 μm were successfully deposited on Pt (111)/ TiO 2/ SiO 2/ Si (100) substrates from polyvinylpyrrolidone (PVP)-modified chemical solution. The effects of thickness on the crystalline structure, electrical properties and the energy-storage performance were investigated in detail. X-Ray diffraction analysis and scanning electron microscopy pictures indicated that AFE films with a thickness less than 4 μm showed a (111)-preferred orientation with uniform surface microstructure. The electrical measurement results illustrated that, as the thickness increased, the saturation polarization, remnant polarization, dielectric constant and leakage current of AFE thick films were enhanced gradually, while the capacitive density and the critical breakdown fields were decreased. Moreover, all the PLZT 4/98/2 AFE films shared the same Curie temperature of about 224°C. As a result, the AFE thick films showed good energy-storage stability in a wide temperature range. The maximum energy-storage density of 47.4 J/cm3 was obtained in the 2-μm-thick PLZT 4/98/2 films measured at 3699 kV/cm.

Effects of glass additions on energy storage performance of (Pb0.97La0.02)(Zr0.92Sn0.05Ti0.03)O3 antiferroelectric thick films

2013 ◽  
Vol 03 (02) ◽  
pp. 1350012 ◽  
Author(s):  
Shengchen Chen ◽  
Tongqing Yang ◽  
Jinfei Wang ◽  
Xi Yao
Keyword(s):  
Energy Storage ◽  
Power Systems ◽  
Breakdown Strength ◽  
Thick Films ◽  
Pulsed Power ◽  
Screen Printing Method ◽  
Glass Addition ◽  
Storage Performance ◽  
Antiferroelectric Thick Films ◽  
Recoverable Energy

50 μm-thick ( Pb 0.97 La 0.02)( Zr 0.92 Sn 0.05 Ti 0.03) O 3 antiferroelectric (AFE) thick films with different amount of 0.8 PbO –0.2 B 2 O 3 glass additions were fabricated by the screen-printing method on alumina substrate, which was pre-coated with Pt as electrode. The effects of glass additions on dielectric properties and energy storage performance were investigated in details. Due to the enhancement of breakdown strength (BDS) of the specimens by the addition of glass, the energy storage performances of the thick films could be greatly improved. As a result, with 3% glass addition, the BDS of the specimens were as high as 475 kV/cm, the maximum polarization of 34.8 μC/cm2 and the maximum recoverable energy storage density of 7.4 J/cm3 were obtained. The results indicated the ( Pb 0.97 La 0.02)( Zr 0.92 Sn 0.05 Ti 0.03) O 3 (PLZST) thick films have a promising potential application in capacitors for pulsed power systems.

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