New mechanisms of helical dislocation formation via the pinch-off process near a nano-inhomogeneity

2018 ◽  
Vol 155 ◽  
pp. 400-409 ◽  
Author(s):  
Yi Cui ◽  
Zengtao Chen ◽  
Yang Ju
Keyword(s):  
Dislocation Formation

Suppression of dislocation formation in silicon by carbon implantation

1995 ◽  
Vol 67 (19) ◽  
pp. 2857-2859 ◽  
Author(s):  
T. W. Simpson ◽  
R. D. Goldberg ◽  
I. V. Mitchell
Keyword(s):  
Dislocation Formation

Relationship between misfit-dislocation formation and initial threading-dislocation density in GaInN/GaN heterostructures

2015 ◽  
Vol 54 (11) ◽  
pp. 115501 ◽  
Author(s):  
Motoaki Iwaya ◽  
Taiji Yamamoto ◽  
Daisuke Iida ◽  
Yasunari Kondo ◽  
Mihoko Sowa ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Misfit Dislocation ◽  
Threading Dislocation ◽  
Threading Dislocation Density ◽  
Dislocation Formation

An empirical potential approach to dislocation formation and structural stability in GaNxAs1−x

2005 ◽  
Vol 244 (1-4) ◽  
pp. 182-185 ◽  
Author(s):  
Keiichi Kawamoto ◽  
Takashi Suda ◽  
Toru Akiyama ◽  
Kohji Nakamura ◽  
Tomonori Ito
Keyword(s):  
Structural Stability ◽  
Potential Approach ◽  
Empirical Potential ◽  
Dislocation Formation

Avoiding Dislocation Formation for B, P, and As Implants in Silicon

1991 ◽  
Vol 235 ◽  
Author(s):  
J. R. Liefting ◽  
V. Raineri ◽  
R. J. Schreutelkamp ◽  
J. S. Custer ◽  
F. W. Saris
Keyword(s):  
Higher Doses ◽  
Dislocation Formation

ABSTRACTImplants of B, P, and As in Si lead to dislocation formation after 900°c annealing if a critical amount of implant damage is exceeded. However, it is possible to implant higher doses without forming dislocations if the dose is implanted in several sub-critical steps. Annealing between each step removes the (sub-critical) implant damage and dislocations do not form. Such avoidance of dislocation formation is demonstrated for 80 keV implants of B and MeV implants of B, P, and As.

The effect of implantation temperature on the mechanism of misfit dislocation formation

1978 ◽  
Vol 45 (2) ◽  
pp. 377-385 ◽  
Author(s):  
V. V. Kalinin ◽  
N. N. Gerasimenko ◽  
S. I. Stenin
Keyword(s):  
Misfit Dislocation ◽  
Implantation Temperature ◽  
Dislocation Formation

Effect of crystal orientation on dislocation formation in LEC GaAs

1987 ◽  
Vol 84 (2) ◽  
pp. 266-270 ◽  
Author(s):  
R. Fornari ◽  
C. Paorici ◽  
L. Zanotti ◽  
L. Zecchina
Keyword(s):  
Crystal Orientation ◽  
Lec Gaas ◽  
Dislocation Formation

scholarly journals Formation of Dislocations in the Growth of Silicon along Different Crystallographic Directions—A Molecular Dynamics Study

Crystals ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 346 ◽  
Author(s):  
Naigen Zhou ◽  
Xiuqin Wei ◽  
Lang Zhou
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Formation Mechanism ◽  
Atomic Interaction ◽  
Seed Crystals ◽  
Dynamics Simulations ◽  
Dislocation Formation

Molecular dynamics simulations of the seeded solidification of silicon along <100>, <110>, <111> and <112> directions have been carried out. The Tersoff potential is adopted for computing atomic interaction. The control of uniaxial strains in the seed crystals is enabled in the simulations. The results show that the dislocation forms stochastically at the crystal/melt interface, with the highest probability of the formation in <111> growth, which agrees with the prediction from a previously proposed twinning-associated dislocation formation mechanism. Applications of the strains within a certain range are found to inhibit the {111}-twinning-associated dislocation formation, while beyond this range they are found to induce dislocation formation by different mechanisms.

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