Critical Thickness for Misfit Dislocation Formation in InAs/GaAs(110) Heteroepitaxy

2008 ◽  
pp. 381-386
Author(s):  
I. Plans ◽  
A. Carpio ◽  
L. L. Bonilla ◽  
R. E. Caflisch
Keyword(s):  
Misfit Dislocation ◽  
Critical Thickness ◽  
Dislocation Formation

Effect of piezoelectricity on critical thickness for misfit dislocation formation at InGaN/GaN interface

2015 ◽  
Vol 97 ◽  
pp. 254-262 ◽  
Author(s):  
D. Mishra ◽  
Y.-H. Cho ◽  
M.-B. Shim ◽  
S. Hwang ◽  
S. Kim ◽  
...  
Keyword(s):  
Misfit Dislocation ◽  
Critical Thickness ◽  
Dislocation Formation

Stress relaxation and critical thickness for misfit dislocation formation in (101¯0) and (3031¯) InGaN/GaN heteroepitaxy

2012 ◽  
Vol 100 (17) ◽  
pp. 171917 ◽  
Author(s):  
Po Shan Hsu ◽  
Matthew T. Hardy ◽  
Erin C. Young ◽  
Alexey E. Romanov ◽  
Steven P. DenBaars ◽  
...  
Keyword(s):  
Stress Relaxation ◽  
Misfit Dislocation ◽  
Critical Thickness ◽  
Dislocation Formation

Relationship between misfit-dislocation formation and initial threading-dislocation density in GaInN/GaN heterostructures

2015 ◽  
Vol 54 (11) ◽  
pp. 115501 ◽  
Author(s):  
Motoaki Iwaya ◽  
Taiji Yamamoto ◽  
Daisuke Iida ◽  
Yasunari Kondo ◽  
Mihoko Sowa ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Misfit Dislocation ◽  
Threading Dislocation ◽  
Threading Dislocation Density ◽  
Dislocation Formation

The effect of implantation temperature on the mechanism of misfit dislocation formation

1978 ◽  
Vol 45 (2) ◽  
pp. 377-385 ◽  
Author(s):  
V. V. Kalinin ◽  
N. N. Gerasimenko ◽  
S. I. Stenin
Keyword(s):  
Misfit Dislocation ◽  
Implantation Temperature ◽  
Dislocation Formation

Interfacial stability and misfit dislocation formation in InAs/GaAs(110) heteroepitaxy

1998 ◽  
Vol 411 (3) ◽  
pp. L865-L871 ◽  
Author(s):  
Dimitrios Maroudas ◽  
Luis A. Zepeda-Ruiz ◽  
W.Henry Weinberg
Keyword(s):  
Misfit Dislocation ◽  
Interfacial Stability ◽  
Dislocation Formation

Equilibrium Analysis of Lattice-Mismatched Nanowire Heterostructures

2002 ◽  
Vol 737 ◽  
Author(s):  
E. Ertekin ◽  
P.A. Greaney ◽  
T. D. Sands ◽  
D. C. Chrzan
Keyword(s):  
Simple Model ◽  
Misfit Dislocation ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Equilibrium Analysis ◽  
Misfit Dislocations ◽  
Model Based ◽  
Large Lattice ◽  
Large Lattice Mismatch

ABSTRACTThe quality of lattice-mismatched semiconductor heterojunctions is often limited by the presence of misfit dislocations. Nanowire geometries offer the promise of creating highly mismatched, yet dislocation free heterojunctions. A simple model, based upon the critical thickness model of Matthews and Blakeslee for misfit dislocation formation in planar heterostructures, illustrates that there exists a critical nanowire radius for which a coherent heterostructured nanowire system is unstable with respect to the formation of misfit dislocations. The model indicates that within the nanowire geometry, it should be possible to create perfect heterojunctions with large lattice-mismatch.

Misfit dislocation formation in p/p+ silicon vapor-phase epitaxy

2000 ◽  
Vol 209 (4) ◽  
pp. 716-723 ◽  
Author(s):  
H. Fukuto ◽  
P. Feichtinger ◽  
G.D. U'Ren ◽  
S. Lindo ◽  
M.S. Goorsky ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Misfit Dislocation ◽  
Vapor Phase Epitaxy ◽  
Silicon Vapor ◽  
Dislocation Formation
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