Robustness of 4H-SiC 1200V Schottky diodes under high electrostatic discharge like human body model stresses: An in-depth failure analysis

2014 ◽  
Vol 44 ◽  
pp. 62-70 ◽  
Author(s):  
P. Denis ◽  
P. Dherbécourt ◽  
O. Latry ◽  
C. Genevois ◽  
F. Cuvilly ◽  
...  
2009 ◽  
Vol 23 (17) ◽  
pp. 3586-3590 ◽  
Author(s):  
NUTTACHAI JUTONG ◽  
APIRAT SIRITARATIWAT ◽  
DUANGPORN SOMPONGSE ◽  
PORNCHAI RAKPONGSIRI

Electrostatic discharge (ESD) effects on GMR recording heads have been reported as the major cause of head failure. Since the information density in hard-disk drives has dramatically increased, the GMR head will be no longer in use. The tunneling magnetoresistive (TMR) read heads are initially introduced for a 100 Gbit/in2 density or more. Though the failure mechanism of ESD in GMR recording heads has not been explicitly understood in detail, a study to protect from this effect has to be done. As the TMR head has been commercially started, the ESD effect must be considered. This is the first time that the TMR equivalent circuit has been reported in order to evaluate the ESD effect. A standard human body model (HBM) is discharged across R+ and R- where the capacitances of flex on suspension (FOS) are varied. It is intriguingly found that the electrical characteristics of the TMR head during the discharge period depend on the discharge position. This may be explained in terms of the asymmetry impedance of TMR by using adapted Thevenin's theory. The effect of FOS components on TMR recording heads is also discussed.


1993 ◽  
Vol 74 (3) ◽  
pp. 1510-1520 ◽  
Author(s):  
Y. Twu ◽  
L. S. Cheng ◽  
S. N. G. Chu ◽  
F. R. Nash ◽  
K. W. Wang ◽  
...  

2009 ◽  
Vol 152-153 ◽  
pp. 439-442 ◽  
Author(s):  
N. Jutong ◽  
D. Sompongse ◽  
P. Rakpongsiri ◽  
Apirat Siritaratiwat

Electrostatic discharge (ESD) effects on GMR recording heads have been reported as the major cause of head failure. Since the information density in hard-disk drives has dramatically increased, the GMR head will be no longer used. The tunneling magnetoresistive (TMR) read heads are initially introduced for a 100 Gbit/in2 density or more. Although the failure mechanism of ESD in GMR recording head has not been explicitly understood in detail, study to protect from this effect has to be undergone. As the TMR head has been commercially started, the ESD effect is closely watched. This is the first time report of the TMR equivalent circuit in order to evaluate the ESD effect. A standard human body model (HBM) is discharged across R+ and R- where the capacitance of flex on suspension (FOS) is varied. It is intriguingly found that the electrical characteristic of the TMR head during discharge period depends on discharge position. This may be explained in terms of asymmetry impedance of TMR by using adapted Thevenin’s theory. The effect of FOS component on TMR recording head is also discussed.


2012 ◽  
Vol 256-259 ◽  
pp. 2923-2926
Author(s):  
Shen Li Chen ◽  
Chien Chin Tseng

The electrostatic discharge (ESD) failure of power drain-extended MOS (DEMOS) devices, the protection circuit SCR, and a DEMOS with SCR protection circuit will be investigated in this paper. The ESD immunity of the DEMOS was very poor under the human-body model (HBM) testing. Here we discuss how to design an ESD good SCR device. Eventually, the ESD immunity of DEMOS test sample with an SCR circuit can significantly improve device ESD performance.


1999 ◽  
Vol 38 (Part 1, No. 8) ◽  
pp. 4632-4641
Author(s):  
Jiaw-Ren Shih ◽  
Jian-Hsing Lee ◽  
Huey-Liang Hwang ◽  
Boon-Khim Liew ◽  
Shang-Yi Chiang

2012 ◽  
Vol 614-615 ◽  
pp. 1438-1441 ◽  
Author(s):  
Shen Li Chen ◽  
Chien Chin Tseng

The electrostatic discharge (ESD) failure of power drain-extended MOS (DEMOS) devices, the protection circuit SCR, and a DEMOS with SCR protection circuit will be investigated in this paper. The ESD immunity of the DEMOS was very poor under the human-body model (HBM) testing. Here we discuss how to design an ESD good SCR device. Eventually, the ESD immunity of DEMOS test sample with an SCR circuit can significantly improve device ESD performance.


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