Robustness of 4H-SiC 1200V Schottky diodes under high electrostatic discharge like human body model stresses: An in-depth failure analysis
2014 ◽
Vol 44
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pp. 62-70
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1998 ◽
Vol 13
(9)
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pp. 967-971
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2009 ◽
Vol 23
(17)
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pp. 3586-3590
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2009 ◽
Vol 152-153
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pp. 439-442
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Keyword(s):
2012 ◽
Vol 256-259
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pp. 2923-2926
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1994 ◽
Vol 30
(3)
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pp. 589-594
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1999 ◽
Vol 38
(Part 1, No. 8)
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pp. 4632-4641
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1995 ◽
Vol 13
(2)
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pp. 186-190
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2012 ◽
Vol 614-615
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pp. 1438-1441
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