Green’s function for KI determination of axisymmetric elastic solids containing external circular crack

2008 ◽  
Vol 75 (8) ◽  
pp. 1891-1905 ◽  
Author(s):  
F.I. Mavrothanasis ◽  
D.G. Pavlou
2011 ◽  
Vol 291-294 ◽  
pp. 2014-2020
Author(s):  
Min He ◽  
Qi Shen Wang

This paper concerns the determination of qualitative properties of linear vibrational systems, in particular for a single branch structure consisting of a pinned beam-rod system. First, we establish the characteristic equations satisfied by the Green’s function for this structure. The Green’s functions corresponding to support conditions where the left end of the beam was pinned-end are deduced by adopting the direct integral method. Using the theory of oscillation kernels established by Gantmakher and Krein, oscillatory properties of the Green's function for the beam-rod system are proved. Furthermore, four oscillation properties associated with frequencies and mode functions for the system are given.


2013 ◽  
Vol 2013 ◽  
pp. 1-15
Author(s):  
Sami Boudieb ◽  
Lyazid Chetouani

The Green function for a Dirac particle moving in a non-Abelian field and having a particular form is exactly determined by the path integral approach. The wave functions were deduced from the residues of Green’s function. It is shown that the classical paths contributed mainly to the determination of the Green function.


1982 ◽  
Vol 60 (2) ◽  
pp. 179-195 ◽  
Author(s):  
Andreas Mandelis

A combined variational–Green's function approach to the determination of the capacitance of various useful three-dimensional geometries is developed. This formalism leads to general, exact expressions for the capacitance, which can be used with all geometries provided the spatial distribution of the charge can be determined. In particular, the theory takes into account the finite thickness and unequal areas of the capacitor plates. Specific applications of the theory include circular capacitors with disc and ring-shaped charged plate geometries. Such geometries are commonly encountered in experimental set-ups for capacitive measurements of thin film thicknesses in the field of microelectronics. Numerical results indicate that the values of thin film thicknesses calculated via simplified one-dimensional formulae for the capacitance may be incorrect by more than 10%


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