Predictors of ovulation in clomiphene citrate (CC) resistant PCOS treated by CC co-administered with low dose step-up highly purified ufsh (HP uFSH) or low dose HP uFSH protocol only

2013 ◽  
Vol 100 (3) ◽  
pp. S360
Author(s):  
M.E. Ghanem ◽  
L.A. Alboghdady ◽  
M. Hassan ◽  
A. Helal
2018 ◽  
Vol 17 (3) ◽  
pp. 315-324 ◽  
Author(s):  
Toshiya Matsuzaki ◽  
Takeshi Iwasa ◽  
Rie Yanagihara ◽  
Mizuki Komasaka ◽  
Kiyohito Yano ◽  
...  

2008 ◽  
Vol 36 (6) ◽  
pp. 1197-1204 ◽  
Author(s):  
R Yildizhan ◽  
E Adali ◽  
A Kolusari ◽  
M Kurdoglu ◽  
B Yildizhan ◽  
...  

Sixty-seven infertile women with polycystic ovary syndrome (PCOS) were divided into two groups, obese and non-obese, according to their body mass index. Waist-to-hip ratio, insulin resistance, total testosterone and dehydroepiandrosterone sulphate levels were significantly elevated in obese, compared with non-obese, patients. Both groups were treated with a low-dose step-up protocol of recombinant follicle-stimulating hormone (rFSH) with a starting dose of 50 IU/day and, every third day, a 25-IU increase in the dose until the appropriate dose was achieved for each individual, up to a maximum of 175 IU/day. In the obese group only, repeat therapy commenced in the second ovulatory cycle in women who had not become pregnant, however a starting dose of 75 IU/day was then used, with incremental and maximum dose as before. The results of the starting dose of 75 IU/day rFSH were compared with the results of a 50 IU/day rFSH starting dose in the obese group. A starting dose of 50 IU/day rFSH in a low-dose step-up regimen was found to be effective, safe and well-tolerated for inducing follicular development in non-obese infertile women with PCOS. However, for obese PCOS patients, a starting dose of 75 IU/day rFSH is recommended.


1989 ◽  
Vol 157 ◽  
Author(s):  
F. Namavar ◽  
E. Cortesi ◽  
R.F. Pinizzotto ◽  
H. Yang

ABSTRACTWe have studied the effect of implantation temperature, dose step, and total dose on the buried Si02 layer formed with a multiple low dose oxygen implantation process. Furthermore, we have produced a continuous, high quality buried SiO2 layer about 1500 Å thick with a dose of only 7 × 1017 0+/cm2 at 160 keV. The thin SiO2 layer is important not only because of the possible economic advantages of reduced dose, but also because a thinner oxide layer is more radiation hard.


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