scholarly journals Direct growth of hexagonal boron nitride films on dielectric sapphire substrates by pulsed laser deposition for optoelectronic applications

Author(s):  
Gaokai Wang ◽  
Jingren Chen ◽  
Junhua Meng ◽  
Zhigang Yin ◽  
Ji Jiang ◽  
...  
1994 ◽  
Vol 76 (5) ◽  
pp. 3088-3101 ◽  
Author(s):  
T. A. Friedmann ◽  
P. B. Mirkarimi ◽  
D. L. Medlin ◽  
K. F. McCarty ◽  
E. J. Klaus ◽  
...  

2014 ◽  
Vol 572 ◽  
pp. 245-250 ◽  
Author(s):  
Nicholas R. Glavin ◽  
Michael L. Jespersen ◽  
Michael H. Check ◽  
Jianjun Hu ◽  
Al M. Hilton ◽  
...  

2016 ◽  
Vol 119 (9) ◽  
pp. 095306 ◽  
Author(s):  
Daniel Velázquez ◽  
Rachel Seibert ◽  
Hamdi Man ◽  
Linda Spentzouris ◽  
Jeff Terry

2015 ◽  
Vol 117 (16) ◽  
pp. 165305 ◽  
Author(s):  
Nicholas R. Glavin ◽  
Christopher Muratore ◽  
Michael L. Jespersen ◽  
Jianjun Hu ◽  
Timothy S. Fisher ◽  
...  

1998 ◽  
Vol 83 (6) ◽  
pp. 3398-3403 ◽  
Author(s):  
B. Angleraud ◽  
M. Cahoreau ◽  
I. Jauberteau ◽  
J. Aubreton ◽  
A. Catherinot

1998 ◽  
Vol 127-129 ◽  
pp. 444-450 ◽  
Author(s):  
S Weissmantel ◽  
G Reisse ◽  
B Keiper ◽  
A Weber ◽  
U Falke ◽  
...  

1992 ◽  
Vol 285 ◽  
Author(s):  
A. K. Ballal ◽  
L. Salamanca-riba ◽  
G. L. Doll ◽  
C. A. Taylor ◽  
R. Clarke

ABSTRACTPreferentially oriented and extremely adherent cubic boron nitride films have been obtained using ion-assisted pulsed laser deposition on (001) Si substrates. The films were ∼ 1800 Å thick, optically transparent and formed an antireflective coating on the Si substrate. Infrared transmittance spectra showed a strong absorption peak at 1080 cm−1, indicating sp3 bonded film. Cross-sectional and plan-view transmission electron microscopy indicate that the cubic boron nitride films are polycrystalline having cubic zinc-blende crystal structure and a lattice constant of 3.62 Å. A preferred texture is observed with the [110] axis of cubic boron nitride parallel to [001] axis of silicon.


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