Global simulation of coupled oxygen and carbon transport in an industrial directional solidification furnace for crystalline silicon ingots: Effect of crucible cover coating

2017 ◽  
Vol 108 ◽  
pp. 2355-2364 ◽  
Author(s):  
Lijun Liu ◽  
Wencheng Ma ◽  
Xiaofang Qi ◽  
Zaoyang Li ◽  
Yunfeng Zhang
Keyword(s):  
Directional Solidification ◽  
Crystalline Silicon ◽  
Global Simulation ◽  
Solidification Furnace ◽  
Carbon Transport

scholarly journals Effect of Argon Flow on Oxygen and Carbon Coupled Transport in an Industrial Directional Solidification Furnace for Crystalline Silicon Ingots

Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 421
Author(s):  
Xiaofang Qi ◽  
Yiwen Xue ◽  
Wenjia Su ◽  
Wencheng Ma ◽  
Lijun Liu
Keyword(s):  
Directional Solidification ◽  
Flow Rate ◽  
Crystalline Silicon ◽  
Coupled Transport ◽  
Argon Flow Rate ◽  
Argon Gas ◽  
Argon Flow ◽  
Silicon Melt ◽  
Solidification Furnace ◽  
Evaporation Flux

Transient global simulations were carried out to investigate the effect of argon flow on oxygen and carbon coupled transport in an industrial directional solidification furnace for quasi-single crystalline silicon ingots. Global calculation of impurity transport in the argon gas and silicon melt was based on a fully coupled calculation of the thermal and flow fields. Numerical results show that the argon flow rate affects the flow intensity along the melt–gas surface, but has no significant effect on the flow patterns of silicon melt and argon gas above the melt–gas surface. It was found that the evaporation flux of SiO along the melt–gas surface decreases with the increasing argon flow rate during the solidification process. However, the net flux of oxygen atoms (SiO evaporation flux minus CO dissolution flux) away from the melt–gas surface increases with the increasing argon flow rate, leading to a decrease in the oxygen concentration in the grown ingot. The carbon concentration in the grown ingot shows an exponential decrease with the increase of the argon flow rate, owing to the fact that the dissolution flux of CO significantly decreases with the increasing argon flow rate. The numerical results agree well with the experimental measurements.

Temperature Distribution of Multi-Crystalline Silicon Ingots in the Directional Solidification Process

2013 ◽  
Vol 690-693 ◽  
pp. 977-980
Author(s):  
Xiang Rong Ma ◽  
Wu Zan ◽  
Xin Liang Zhang
Keyword(s):  
Temperature Distribution ◽  
Directional Solidification ◽  
Crystalline Silicon ◽  
Solidification Process ◽  
Casting Process ◽  
System Optimization ◽  
Silicon Melt ◽  
Solidification Furnace ◽  
Essential Knowledge ◽  
Melt Solidification

In order to better understand the casting process, we carried out global simulations of heat transfer to investigate the temperature distributions in furnace at 80 mm of insulation cage elevation and 40% of silicon melt solidification for multi-crystalline silicon (mc-Si) ingot using an industrial directional solidification furnace capable of producing 500 kg silicon ingot. The effect of heater position and the crystallization state of silicon melt on temperature distribution and interface shape are discussed as well to provide the essential knowledge for system optimization.

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