Determination of the standard free energies of formation for tungsten silicides by EMF measurements using lithium silicate liquid electrolyte

2005 ◽  
Vol 391 (1-2) ◽  
pp. 307-312 ◽  
Author(s):  
Hiroyasu Fujiwara ◽  
Yukitomi Ueda ◽  
Alok Awasthi ◽  
Nagaiyar Krishnamurthy ◽  
Sheo Parkash Garg
2010 ◽  
Vol 114 (48) ◽  
pp. 16020-16028 ◽  
Author(s):  
Bo Yang ◽  
Adel Hamza ◽  
Guangju Chen ◽  
Yan Wang ◽  
Chang-Guo Zhan
Keyword(s):  

1986 ◽  
Vol 82 ◽  
Author(s):  
F.D. Gealy ◽  
H.L. Tuller

ABSTRACTElectrically active defects are common in semiconductors. Such defects include easily ionized substitutional impurities, vacancies, and interstitials which can act as shallow donors or acceptors. If one type of defect predominates, its concentration corresponds directly to the local donor or acceptor concentration. Consequently, measurement of a carrier profile in a nonhomogeneous semiconductor is effectively the same as measurement of the defect profile.The photoelectrochemical profiling technique allows for carrier profile measurement with submicrometer spatial resolution. The sample is profiled by photoetching, then carrier measurement, and iterating this procedure until the desired profile depth is obtained.Derivation of the space charge capacitance by impedance spectroscopy is discussed. An analysis of the P-doped Si-liquid electrolyte interface is presented. Phosphorous diffusivity coefficients in good agreement with literature values are derived from photoelectrochemical derived profiles.


2020 ◽  
Vol 60 (3) ◽  
pp. 1424-1431 ◽  
Author(s):  
Shi Li ◽  
Balaji Sesha Sarath Pokuri ◽  
Sean M. Ryno ◽  
Asare Nkansah ◽  
Camron De’Vine ◽  
...  

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