MOCVD growth of highly strained InGaAs:Sb–GaAs–GaAsP quantum well vertical cavity surface-emitting lasers with 1.27μm emission
2004 ◽
Vol 272
(1-4)
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pp. 538-542
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Keyword(s):
2007 ◽
Vol 46
(No. 21)
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pp. L509-L511
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Keyword(s):
1998 ◽
Vol 4
(4)
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pp. 715-722
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2016 ◽
Vol 55
(8S3)
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pp. 08RC01
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Keyword(s):
2006 ◽
Vol 45
(8B)
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pp. 6691-6696
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1997 ◽
Vol 9
(5)
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pp. 713-736
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Keyword(s):