monolithic integration
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2021 ◽  
Author(s):  
Wei Kou ◽  
Hongji Zhou ◽  
Shixiong Liang ◽  
Yaxin Zhang ◽  
Sen Gong ◽  
...  

2021 ◽  
Author(s):  
Xianhe Liu ◽  
Yi Sun ◽  
Yakshita Malhotra ◽  
yuanpeng wu ◽  
Zetian Mi

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Ye Wang ◽  
Jiongdong Zhao ◽  
Yu Zhu ◽  
Shurong Dong ◽  
Yang Liu ◽  
...  

AbstractHere, we present integrated nanorod arrays on microfluidic chips for fast and sensitive flow-through immunoassays of physiologically relevant macromolecules. Dense arrays of Au nanorods are easily fabricated through one-step oblique angle deposition, which eliminates the requirement of advanced lithography methods. We report the utility of this plasmonic structure to improve the detection limit of the cardiac troponin I (cTnI) assay by over 6 × 105-fold, reaching down to 33.9 fg mL−1 (~1.4 fM), compared with an identical assay on glass substrates. Through monolithic integration with microfluidic elements, the device enables a flow-through assay for quantitative detection of cTnI in the serum with a detection sensitivity of 6.9 pg mL−1 (~0.3 pM) in <6 min, which was 4000 times lower than conventional glass devices. This ultrasensitive detection arises from the large surface area for antibody conjugation and metal-enhanced fluorescent signals through plasmonic nanostructures. Moreover, due to the parallel arrangement of flow paths, simultaneous detection of multiple cancer biomarkers, including prostate-specific antigen and carcinoembryonic antigen, has been fulfilled with increased signal-to-background ratios. Given the high performance of this assay, together with its simple fabrication process that is compatible with standard mass manufacturing techniques, we expect that the prepared integrated nanorod device can bring on-site point-of-care diagnosis closer to reality.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yilin Xu ◽  
Pascal Maier ◽  
Matthias Blaicher ◽  
Philipp-Immanuel Dietrich ◽  
Pablo Marin-Palomo ◽  
...  

AbstractCombining semiconductor optical amplifiers (SOA) on direct-bandgap III–V substrates with low-loss silicon or silicon-nitride photonic integrated circuits (PIC) has been key to chip-scale external-cavity lasers (ECL) that offer wideband tunability along with small optical linewidths. However, fabrication of such devices still relies on technologically demanding monolithic integration of heterogeneous material systems or requires costly high-precision package-level assembly, often based on active alignment, to achieve low-loss coupling between the SOA and the external feedback circuits. In this paper, we demonstrate a novel class of hybrid ECL that overcome these limitations by exploiting 3D-printed photonic wire bonds as intra-cavity coupling elements. Photonic wire bonds can be written in-situ in a fully automated process with shapes adapted to the mode-field sizes and the positions of the chips at both ends, thereby providing low-loss coupling even in presence of limited placement accuracy. In a proof-of-concept experiment, we use an InP-based reflective SOA (RSOA) along with a silicon photonic external feedback circuit and demonstrate a single-mode tuning range from 1515 to 1565 nm along with side mode suppression ratios above 40 dB and intrinsic linewidths down to 105 kHz. Our approach combines the scalability advantages of monolithic integration with the performance and flexibility of hybrid multi-chip assemblies and may thus open a path towards integrated ECL on a wide variety of integration platforms.


2021 ◽  
Author(s):  
Philippe Jean ◽  
Alexandre Douaud ◽  
Souleymane Toubou Bah ◽  
Sophie LaRochelle ◽  
Younes Messaddeq ◽  
...  

2021 ◽  
Author(s):  
Jing Liu ◽  
Peilin Liu ◽  
Dengyang Chen ◽  
Tailong Shi ◽  
Xixi Qu ◽  
...  

Abstract Near-infrared (NIR, 0.7–1.4 µm) imagers have wide applications in night surveillance, material sorting, machine vision and potentially automatic driving. However, limited by the high-temperature processing and requirement of single-crystalline substrate, so far flip-chip is the dominant way to connect infrared photodiodes and silicon-based readout integrated circuit (ROIC) to produce infrared imagers, suffering from complicated process and ultra-high cost and hence limiting their widespread applications in the market. Here we report the monolithic integration of colloidal quantum dots (CQD) photodiodes with complementary metal-oxide-semiconductor (CMOS) ROIC, operating as a low-cost and high-performance imager. The CQD photodetector is well designed with a CMOS-compatible structure, demonstrating a response spectral range of 400–1300 nm, a detectivity of 2.1×1012 Jones at room temperature, a -3dB bandwidth of 140 kHz and a linear dynamic range over 100 dB. The CQD imager can identify materials, inspect apple scar and veins with a large size of 640×512 pixels and a spatial resolution of 40 lp/mm at a modulation transfer function of 50%. Monolithic integration significantly reduces the cost without sacrificing performance, thus providing huge potential for the ubiquitous deployment of infrared imagers.


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