Gas source molecular-beam epitaxial growth of TlInGaAsN double quantum well light emitting diode structures and thallium incorporation characteristics

T. Matsumoto; D. Krishnamurthy; A. Fujiwara; S. Hasegawa; H. Asahi

doi:10.1016/j.jcrysgro.2006.08.013

Gas source molecular-beam epitaxial growth of TlInGaAsN double quantum well light emitting diode structures and thallium incorporation characteristics

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2006.08.013 ◽

2006 ◽

Vol 295 (2) ◽

pp. 133-136 ◽

Cited By ~ 11

Author(s):

T. Matsumoto ◽

D. Krishnamurthy ◽

A. Fujiwara ◽

S. Hasegawa ◽

H. Asahi

Keyword(s):

Quantum Well ◽

Epitaxial Growth ◽

Molecular Beam ◽

Light Emitting Diode ◽

Double Quantum ◽

Light Emitting ◽

Molecular Beam Epitaxial ◽

Gas Source ◽

Double Quantum Well ◽

Molecular Beam Epitaxial Growth

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Gas‐source molecular beam epitaxial growth, characterization, and light‐emitting diode application of InxGa1−xP on GaP(100)

Applied Physics Letters ◽

10.1063/1.109367 ◽

1993 ◽

Vol 62 (19) ◽

pp. 2369-2371 ◽

Cited By ~ 25

Author(s):

T. P. Chin ◽

J. C. P. Chang ◽

K. L. Kavanagh ◽

C. W. Tu ◽

P. D. Kirchner ◽

...

Keyword(s):

Epitaxial Growth ◽

Molecular Beam ◽

Light Emitting Diode ◽

Light Emitting ◽

Molecular Beam Epitaxial ◽

Gas Source ◽

Growth Characterization ◽

Molecular Beam Epitaxial Growth

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Generation of fast-switching As2 and P2 beams from AsH3 and PH3 for gas-source molecular-beam epitaxial growth of InGaAs/InP multiple quantum well and superlattice structures

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.587005 ◽

1993 ◽

Vol 11 (3) ◽

pp. 1045 ◽

Cited By ~ 11

Author(s):

S. L. Jackson

Keyword(s):

Quantum Well ◽

Epitaxial Growth ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Molecular Beam Epitaxial ◽

Fast Switching ◽

Gas Source ◽

Superlattice Structures ◽

Molecular Beam Epitaxial Growth

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Gas-source molecular-beam epitaxial growth of Ga(In)NP on GaP(100) substrates for yellow-amber light-emitting devices

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1878996 ◽

2005 ◽

Vol 23 (3) ◽

pp. 1317 ◽

Cited By ~ 4

Author(s):

V. A. Odnoblyudov ◽

C. W. Tu

Keyword(s):

Epitaxial Growth ◽

Molecular Beam ◽

Light Emitting ◽

Light Emitting Devices ◽

Amber Light ◽

Molecular Beam Epitaxial ◽

Gas Source ◽

Molecular Beam Epitaxial Growth

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Gas source molecular-beam epitaxial growth of normal incidence GaAs/AlGaAs quantum well infrared photodetectors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.586111 ◽

1992 ◽

Vol 10 (2) ◽

pp. 995 ◽

Cited By ~ 6

Author(s):

J. M. Kuo

Keyword(s):

Quantum Well ◽

Epitaxial Growth ◽

Molecular Beam ◽

Normal Incidence ◽

Infrared Photodetectors ◽

Molecular Beam Epitaxial ◽

Quantum Well Infrared Photodetectors ◽

Gas Source ◽

Molecular Beam Epitaxial Growth

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Differential gain and threshold current of 1.3 μm tensile-strained InGaAsP multi quantum well buried-heterostructure lasers grown by metalorganic molecular beam epitaxial growth

Applied Physics Letters ◽

10.1063/1.121112 ◽

1998 ◽

Vol 72 (13) ◽

pp. 1553-1555 ◽

Cited By ~ 5

Author(s):

Masayuki Itoh ◽

Hideo Sugiura ◽

Hiroshi Yasaka ◽

Yasuhiro Kondo ◽

Kenji Kishi ◽

...

Keyword(s):

Quantum Well ◽

Epitaxial Growth ◽

Molecular Beam ◽

Threshold Current ◽

Molecular Beam Epitaxial ◽

Differential Gain ◽

Buried Heterostructure ◽

Molecular Beam Epitaxial Growth ◽

Multi Quantum Well

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Molecular beam epitaxial growth and characterization of ZnSe on (001) ZnSe substrates and its application in light-emitting diodes

Semiconductor Science and Technology ◽

10.1088/0268-1242/11/1/023 ◽

1996 ◽

Vol 11 (1) ◽

pp. 107-115 ◽

Cited By ~ 20

Author(s):

H Wenisch ◽

K Schüll ◽

D Hommel ◽

G Landwehr ◽

D Siche ◽

...

Keyword(s):

Epitaxial Growth ◽

Molecular Beam ◽

Light Emitting Diodes ◽

Light Emitting ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Studies of ammonia dissociation during the gas source molecular-beam epitaxial growth of III nitrides

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1878972 ◽

2005 ◽

Vol 23 (3) ◽

pp. 1186 ◽

Cited By ~ 6

Author(s):

G. W. Wicks ◽

M. W. Koch ◽

J. R. Pedrazzani

Keyword(s):

Epitaxial Growth ◽

Molecular Beam ◽

Molecular Beam Epitaxial ◽

Gas Source ◽

Molecular Beam Epitaxial Growth

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Gas Source Molecular Beam Epitaxial Growth of ZnSe Using Metal Zn andH2Se

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.3505 ◽

1994 ◽

Vol 33 (Part 1, No. 6A) ◽

pp. 3505-3509 ◽

Cited By ~ 8

Author(s):

Masayuki Imaizumi ◽

Yasuyuki Endoh ◽

Ken-ichi Ohtsuka ◽

Toshiro Isu

Keyword(s):

Epitaxial Growth ◽

Molecular Beam ◽

Molecular Beam Epitaxial ◽

Gas Source ◽

Molecular Beam Epitaxial Growth

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Behavior of Growth Rate in Gas Source Molecular Beam Epitaxial Growth of InP Using Phosphine

10.7567/ssdm.1993.pd-3-8 ◽

1993 ◽

Author(s):

B. X. YANG ◽

H. HASEGAWA

Keyword(s):

Growth Rate ◽

Epitaxial Growth ◽

Molecular Beam ◽

Molecular Beam Epitaxial ◽

Gas Source ◽

Molecular Beam Epitaxial Growth

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Gas source molecular beam epitaxial growth of GaP/AlP modulated superlattices and their optical properties

Journal of Crystal Growth ◽

10.1016/0022-0248(95)80275-h ◽

1995 ◽

Vol 150 ◽

pp. 574-578 ◽

Cited By ~ 6

Author(s):

J.H. Kim ◽

H. Asahi ◽

K. Asami ◽

K. Iwata ◽

S.G. Kim ◽

...

Keyword(s):

Optical Properties ◽

Epitaxial Growth ◽

Molecular Beam ◽

Molecular Beam Epitaxial ◽

Gas Source ◽

Molecular Beam Epitaxial Growth

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