Generation of fast-switching As2 and P2 beams from AsH3 and PH3 for gas-source molecular-beam epitaxial growth of InGaAs/InP multiple quantum well and superlattice structures

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.587005 ◽

1993 ◽

Vol 11 (3) ◽

pp. 1045 ◽

Author(s):

S. L. Jackson

Keyword(s):

Quantum Well ◽

Epitaxial Growth ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Molecular Beam Epitaxial ◽

Fast Switching ◽

Superlattice Structures ◽

Molecular Beam Epitaxial Growth

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Molecular beam epitaxial growth of IV–VI multiple quantum well structures on Si(111) and BaF[sub 2](111) and optical studies of epilayer heating

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1385915 ◽

2001 ◽

Vol 19 (4) ◽

pp. 1447 ◽

Author(s):

H. Z. Wu ◽

P. J. McCann ◽

O. Alkhouli ◽

X. M. Fang ◽

D. McAlister ◽

...

Keyword(s):

Quantum Well ◽

Epitaxial Growth ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Optical Studies ◽

Quantum Well Structures ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Gas source molecular-beam epitaxial growth of normal incidence GaAs/AlGaAs quantum well infrared photodetectors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.586111 ◽

1992 ◽

Vol 10 (2) ◽

pp. 995 ◽

Author(s):

J. M. Kuo

Keyword(s):

Quantum Well ◽

Epitaxial Growth ◽

Molecular Beam ◽

Normal Incidence ◽

Infrared Photodetectors ◽

Molecular Beam Epitaxial ◽

Quantum Well Infrared Photodetectors ◽

Molecular Beam Epitaxial Growth

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Molecular beam epitaxial growth and transmission electron microscopy studies of thin GaAs/InAs(100) multiple quantum well structures

Applied Physics Letters ◽

10.1063/1.95788 ◽

1985 ◽

Vol 46 (10) ◽

pp. 983-985 ◽

Author(s):

F. J. Grunthaner ◽

M. Y. Yen ◽

R. Fernandez ◽

T. C. Lee ◽

A. Madhukar ◽

...

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Epitaxial Growth ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Quantum Well Structures ◽

Molecular Beam Epitaxial ◽

Transmission Electron ◽

Molecular Beam Epitaxial Growth

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Gas source molecular-beam epitaxial growth of TlInGaAsN double quantum well light emitting diode structures and thallium incorporation characteristics

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2006.08.013 ◽

2006 ◽

Vol 295 (2) ◽

pp. 133-136 ◽

Author(s):

T. Matsumoto ◽

D. Krishnamurthy ◽

A. Fujiwara ◽

S. Hasegawa ◽

H. Asahi

Keyword(s):

Quantum Well ◽

Epitaxial Growth ◽

Molecular Beam ◽

Light Emitting Diode ◽

Double Quantum ◽

Light Emitting ◽

Molecular Beam Epitaxial ◽

Double Quantum Well ◽

Molecular Beam Epitaxial Growth

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Differential gain and threshold current of 1.3 μm tensile-strained InGaAsP multi quantum well buried-heterostructure lasers grown by metalorganic molecular beam epitaxial growth

Applied Physics Letters ◽

10.1063/1.121112 ◽

1998 ◽

Vol 72 (13) ◽

pp. 1553-1555 ◽

Author(s):

Masayuki Itoh ◽

Hideo Sugiura ◽

Hiroshi Yasaka ◽

Yasuhiro Kondo ◽

Kenji Kishi ◽

...

Keyword(s):

Quantum Well ◽

Epitaxial Growth ◽

Molecular Beam ◽

Threshold Current ◽

Molecular Beam Epitaxial ◽

Differential Gain ◽

Buried Heterostructure ◽

Molecular Beam Epitaxial Growth ◽

Multi Quantum Well

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Strain-compensations for interfacial strain and average strain in InGaAs/InAIP highly compressive-strained multiple quantum well structures on InP grown by gas source molecular beam epitaxy

Control of Semiconductor Interfaces ◽

10.1016/b978-0-444-81889-8.50016-x ◽

1994 ◽

pp. 69-73

Author(s):

K. Naniwae ◽

S. Sugou ◽

T. Anan

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Average Strain ◽

Quantum Well Structures ◽

Interfacial Strain

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Low substrate temperature and low As-pressure growth concept for the molecular beam epitaxial growth of (Ga,In)(N,As) multiple quantum wells

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2006.09.009 ◽

2007 ◽

Vol 301-302 ◽

pp. 529-533 ◽

Author(s):

Fumitaro Ishikawa ◽

Achim Trampert ◽

Klaus H. Ploog

Keyword(s):

Substrate Temperature ◽

Quantum Wells ◽

Epitaxial Growth ◽

Molecular Beam ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Low‐threshold 1.3‐μm wavelength, InGaAsP strained‐layer multiple quantum well lasers grown by gas source molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.112192 ◽

1994 ◽

Vol 65 (7) ◽

pp. 892-894 ◽

Author(s):

Guang‐Jye Shiau ◽

Chih‐Ping Chao ◽

Paul E. Burrows ◽

Stephen R. Forrest

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Strained Layer ◽

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Studies of ammonia dissociation during the gas source molecular-beam epitaxial growth of III nitrides

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1878972 ◽

2005 ◽

Vol 23 (3) ◽

pp. 1186 ◽

Author(s):

G. W. Wicks ◽

M. W. Koch ◽

J. R. Pedrazzani

Keyword(s):

Epitaxial Growth ◽

Molecular Beam ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Gas Source Molecular Beam Epitaxial Growth of ZnSe Using Metal Zn andH2Se

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.3505 ◽

1994 ◽

Vol 33 (Part 1, No. 6A) ◽

pp. 3505-3509 ◽

Author(s):

Masayuki Imaizumi ◽

Yasuyuki Endoh ◽

Ken-ichi Ohtsuka ◽

Toshiro Isu

Keyword(s):

Epitaxial Growth ◽

Molecular Beam ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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