Differential gain and threshold current of 1.3 μm tensile-strained InGaAsP multi quantum well buried-heterostructure lasers grown by metalorganic molecular beam epitaxial growth

1998 ◽  
Vol 72 (13) ◽  
pp. 1553-1555 ◽  
Author(s):  
Masayuki Itoh ◽  
Hideo Sugiura ◽  
Hiroshi Yasaka ◽  
Yasuhiro Kondo ◽  
Kenji Kishi ◽  
...  
Keyword(s):  
Quantum Well ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Threshold Current ◽  
Molecular Beam Epitaxial ◽  
Differential Gain ◽  
Buried Heterostructure ◽  
Molecular Beam Epitaxial Growth ◽  
Multi Quantum Well

scholarly journals Molecular Beam Epitaxial Growth of the InSb/CdTe Single Quantum Well Structures on GaAs (100) Substrates.

Shinku ◽  
2000 ◽  
Vol 43 (3) ◽  
pp. 333-336 ◽  
Author(s):  
Kazuto KOIKE ◽  
Kuniaki SUEYOSHI ◽  
Ken-ichi TANAKA ◽  
Shuwei LI ◽  
Katsuhiro FUJII ◽  
...  
Keyword(s):  
Quantum Well ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Effect of the unintentional incorporation of Al during the molecular beam epitaxial growth of GaInNAs quantum well

2008 ◽  
Vol 5 (9) ◽  
pp. 2736-2739 ◽  
Author(s):  
S. D. Wu ◽  
M. Kato ◽  
M. Uchiyama ◽  
K. Higashi ◽  
F. Ishikawa ◽  
...  
Keyword(s):  
Quantum Well ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth
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