High internal quantum efficiency ZnO/ZnMgO multiple quantum wells prepared on GaN/sapphire templates for ultraviolet light emitting diodes

2019 ◽  
Vol 7 (22) ◽  
pp. 6534-6538 ◽  
Author(s):  
Shanshan Chen ◽  
Chenxiao Xu ◽  
Xinhua Pan ◽  
Haiping He ◽  
Jingyun Huang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Ultraviolet Light ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Threading Dislocations ◽  
Light Emitting ◽  
Ultraviolet Light Emitting Diodes

Dramatically reduced edge threading dislocations and a record IQE of 61% are obtained for ZnO/Zn0.9Mg0.1O MQWs by using GaN/Al2O3 as substrates.

scholarly journals GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells

2015 ◽  
Vol 23 (7) ◽  
pp. A337 ◽  
Author(s):  
Hung-Ming Chang ◽  
Wei-Chih Lai ◽  
Wei-Shou Chen ◽  
Shoou-Jinn Chang
Keyword(s):  
Quantum Wells ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Ultraviolet Light Emitting Diodes

Quaternary AlInGaN Multiple Quantum Wells for Ultraviolet Light Emitting Diodes

2001 ◽  
Vol 40 (Part 2, No. 9A/B) ◽  
pp. L921-L924 ◽  
Author(s):  
Jian Ping Zhang ◽  
Vinod Adivarahan ◽  
Hong Mei Wang ◽  
Qhalid Fareed ◽  
Edmundas Kuokstis ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Ultraviolet Light Emitting Diodes

High Internal Quantum Efficiency Blue Light-emitting Diodes with Triangular Shaped InGaN/GaN Multiple Quantum Wells

2013 ◽  
Vol 34 (1) ◽  
pp. 66-72
Author(s):  
赵芳 ZHAO Fang ◽  
张运炎 ZHANG Yun-yan ◽  
宋晶晶 SONG Jing-jing ◽  
丁彬彬 DING Bin-bin ◽  
范广涵 FAN Guang-han
Keyword(s):  
Quantum Wells ◽  
Blue Light ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting

Stripe Geometry Ultraviolet Light Emitting Diodes at 305 Nanometers Using Quaternary AlInGaN Multiple Quantum Wells

2001 ◽  
Vol 40 (Part 2, No. 12A) ◽  
pp. L1308-L1310 ◽  
Author(s):  
Muhammad Asif Khan ◽  
Vinod Adivarahan ◽  
Jian Ping Zhang ◽  
Changqing Chen ◽  
Edmundas Kuokstis ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Ultraviolet Light Emitting Diodes

Ultraviolet Light Emitting Diodes Using Non-Polar a-Plane GaN-AlGaN Multiple Quantum Wells

2003 ◽  
Vol 42 (Part 2, No.9A/B) ◽  
pp. L1039-L1040 ◽  
Author(s):  
Changqing Chen ◽  
Vinod Adivarahan ◽  
Jinwei Yang ◽  
Maxim Shatalov ◽  
Edmundas Kuokstis ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Ultraviolet Light Emitting Diodes
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