Influence of additional insulation block on multi-crystalline silicon ingot growth process for PV applications

2019 ◽  
Vol 516 ◽  
pp. 10-16 ◽  
Author(s):  
S.G. Nagarajan ◽  
S. Sanmugavel ◽  
V. Kesavan ◽  
G. Aravindan ◽  
M. Srinivasan ◽  
...  
Keyword(s):  
Growth Process ◽  
Crystalline Silicon ◽  
Silicon Ingot ◽  
Insulation Block

Production of high performance multi-crystalline silicon ingot by using composite nucleant

2020 ◽  
Vol 542 ◽  
pp. 125666 ◽  
Author(s):  
Qi Lei ◽  
Liang He ◽  
Senlin Rao ◽  
Changxin Tang ◽  
Liang Ming ◽  
...  
Keyword(s):  
High Performance ◽  
Crystalline Silicon ◽  
Silicon Ingot

Thermal Analysis of the Mg-Al Alloys

2006 ◽  
Vol 508 ◽  
pp. 603-608 ◽  
Author(s):  
Jožef Medved ◽  
Primož Mrvar
Keyword(s):  
Numerical Simulation ◽  
Thermal Field ◽  
Crystalline Silicon ◽  
Al Alloys ◽  
Viscoplastic Deformation ◽  
Silicon Ingot ◽  
Cooling Conditions ◽  
Crystallisation Process ◽  
Transient Thermal

Multi-crystalline silicon ingot casting using directional crystallisation is the most costeffective technique for the production of Si for the photovoltaic industry. Non-uniform cooling conditions and a non-planarity of the solidification front result, however, in the build-up of stresses and viscoplastic deformation. Known defects, such as dislocations and residual stresses, can then occur and reduce the quality of the produced material. Numerical simulation, combined with experimental investigation, is therefore a key tool for understanding the crystallisation process, and optimizing it. The purpose of the present work is to present an experimental furnace for directional crystallisation of silicon, and its analysis by means of numerical simulation. The complete casting procedure, i.e., including both the crystallisation phase and the subsequent ingot cooling, is simulated. The thermal field has been computed by a CFD tool, taking into account important phenomena such as radiation and convection in the melt. The transient thermal field is used as input for a thermo-elasto-viscoplastic model for the analysis of stress build-up and viscoplastic deformation during the process. Numerical analysis is employed to identify process phases where further optimisation is needed in order to reduce generated defects.

Simulation Analysis of Direction Solidification Process with Fixed Partition Block to Grow Multi Crystalline Silicon Ingot

Silicon ◽  
2018 ◽  
Vol 11 (1) ◽  
pp. 401-406 ◽  
Author(s):  
S. G. Nagarajan ◽  
G. Anbu ◽  
M. Srinivasan ◽  
K. Aravinth ◽  
P. Ramasamy
Keyword(s):  
Simulation Analysis ◽  
Crystalline Silicon ◽  
Solidification Process ◽  
Silicon Ingot ◽  
Partition Block

3D numerical study of coupled crystallization and carbon segregation during multi-crystalline silicon ingot solidification

2017 ◽  
Vol 59 ◽  
pp. 76-86 ◽  
Author(s):  
Amir Reza Ansari Dezfoli ◽  
Weng-Sing Hwang ◽  
Anmar Khalid Shukur ◽  
James Augusto ◽  
Yu Shan Huang ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
Numerical Study ◽  
Carbon Segregation ◽  
Silicon Ingot ◽  
Ingot Solidification
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