Influence of Additional Insulation Block on Melt-Crystal Interface Shape in Directional Solidification System for Growing High Quality mc-Silicon Ingot: a Simulation Investigation

Silicon ◽  
2020 ◽  
Author(s):  
G. Anbu ◽  
S.G. Nagarajan ◽  
G. Aravindan ◽  
M. Srinivasan ◽  
P. Ramasamy
Keyword(s):  
Directional Solidification ◽  
Interface Shape ◽  
High Quality ◽  
Silicon Ingot ◽  
Insulation Block ◽  
Crystal Interface

scholarly journals Influence of Crucible Thermal Conductivity on Crystal Growth in an Industrial Directional Solidification Process for Silicon Ingots

2016 ◽  
Vol 2016 ◽  
pp. 1-9 ◽  
Author(s):  
Zaoyang Li ◽  
Lijun Liu ◽  
Yunfeng Zhang ◽  
Genshu Zhou
Keyword(s):  
Heat Transfer ◽  
Thermal Conductivity ◽  
Crystal Growth ◽  
Directional Solidification ◽  
Silicon Crystal ◽  
Solidification Process ◽  
Interface Shape ◽  
Directional Solidification Process ◽  
Reasonable Range ◽  
Crystal Interface

We carried out transient global simulations of heating, melting, growing, annealing, and cooling stages for an industrial directional solidification (DS) process for silicon ingots. The crucible thermal conductivity is varied in a reasonable range to investigate its influence on the global heat transfer and silicon crystal growth. It is found that the crucible plays an important role in heat transfer, and therefore its thermal conductivity can influence the crystal growth significantly in the entire DS process. Increasing the crucible thermal conductivity can shorten the time for melting of silicon feedstock and growing of silicon crystal significantly, and therefore large thermal conductivity is helpful in saving both production time and power energy. However, the high temperature gradient in the silicon ingots and the locally concave melt-crystal interface shape for large crucible thermal conductivity indicate that high thermal stress and dislocation propagation are likely to occur during both growing and annealing stages. Based on the numerical simulations, some discussions on designing and choosing the crucible thermal conductivity are presented.

Numerical Study of the Effect of Magnetic Fields on Melt-Crystal Interface-Deflection in Czochralski Crystal Growth

2003 ◽  
Author(s):  
Lijun Liu ◽  
Koichi Kakimoto
Keyword(s):  
Magnetic Field ◽  
Magnetic Fields ◽  
Numerical Study ◽  
Silicon Crystal ◽  
Czochralski Growth ◽  
Thermal Flow ◽  
Interface Shape ◽  
Convective Thermal ◽  
And Control ◽  
Crystal Interface

In order to control the impurity distribution and remove defects in a crystal grown in Czochralski growth for high quality crystals of silicon, it is necessary to study and control the melt-crystal interface shape, which plays an important role in control of the crystal quality. The melt-crystal interface interacts with and is determined by the convective thermal flow of the melt in the crucible. Application of magnetic field in the Czochralski system is an effective tool to control the convective thermal flow in the crucible. Therefore, the shape of the melt-crystal interface can be modified accordingly. Numerical study is performed in this paper to understand the effect of magnetic field on the interface deflection in Czochralski system. Comparisons have been carried out by computations for four arrangements of the magnetic field: without magnetic field, a vertical magnetic field and two types of cusp-shaped magnetic field. The velocity, pressure, thermal and electromagnetic fields are solved with adaptation of the mesh to the iteratively modified interface shape. The multi-block technique is applied to discretize the melt field in the crucible and the solid field of silicon crystal. The unknown shape of the melt-crystal interface is achieved by an iterative procedure. The computation results show that the magnetic fields have obvious effects on both the pattern and strength of the convective flow and the interface shape. Applying magnetic field in the Czochralski system, therefore, is an effective tool to control the quality of bulk crystal in Czochralski growth process.

Effect of the pulling, crystal and crucible rotation rate on the thermal stress and the melt–crystal interface in the Czochralski growth of germanium crystals

CrystEngComm ◽  
2021 ◽  
Vol 23 (39) ◽  
pp. 6967-6976
Author(s):  
Mahboobeh Saadatirad ◽  
Mohammad Hossein Tavakoli ◽  
Hossein Khodamoradi ◽  
Seyedeh Razieh Masharian
Keyword(s):  
Thermal Stress ◽  
Rotation Rate ◽  
Czochralski Growth ◽  
Interface Shape ◽  
Crucible Rotation ◽  
Crystal Interface

The effect of the pulling rate on the melt–crystal interface shape and melt streamline is investigated.

scholarly journals Growth of High-Quality Multicrystalline Silicon Ingot through the Cristobalite Seeded Method

2016 ◽  
Vol 6 (6) ◽  
Author(s):  
Yunyang Yu ◽  
Junjing Ding ◽  
Wenliang Chen ◽  
Zhaoyu Zhang ◽  
Xucheng Zhou ◽  
...  
Keyword(s):  
Multicrystalline Silicon ◽  
High Quality ◽  
Silicon Ingot

Optimization of Bulk Hgcdte Growth in a Directional Solidification Furnace by Numerical Simulation

1995 ◽  
Vol 398 ◽  
Author(s):  
A.V. Bune ◽  
D.C. Gillies ◽  
S.L. Lehoczky
Keyword(s):  
Heat Transfer ◽  
Numerical Simulation ◽  
Finite Element ◽  
Crystal Growth ◽  
Numerical Model ◽  
Directional Solidification ◽  
Growth Conditions ◽  
Finite Element Code ◽  
Interface Shape ◽  
Solidification Furnace

ABSTRACTA numerical model of heat transfer by combined conduction, radiation and convection was developed using the FIDAP finite element code for NASA's Advanced Automated Directional Solidification Furnace (AADSF). The prediction of the temperature gradient in an ampoule with HgCdTe is a necessity for the evaluation of whether or not the temperature set points for furnace heaters and the details of cartridge design ensure optimal crystal growth conditions for this material and size of crystal. A prediction of crystal/melt interface shape and the flow patterns in HgCdTe are available using a separate complementary model.

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