Luminescence redshift of thick InGaN/GaN heterostructures induced by the migration of surface adsorbed atoms
Keyword(s):
2017 ◽
Vol 9
(5)
◽
pp. 05023-1-05023-7
◽
Keyword(s):
1988 ◽
Vol 51
(6)
◽
pp. 759-832
◽
1965 ◽
Vol 33
(3)
◽
pp. 181-187
2018 ◽
Vol 21
(1)
◽
pp. 41-47