Lead zinc niobate (PZN) added lead zirconate titanate (PZT) thick films with thickness of
5~10 μm were fabricated on silicon and sapphire substrates using aerosol deposition method. The
contents of PZN were varied from 0, 20 and 40 %. The as deposited film had fairly dense
microstructure without any crack, and showed only a perovskite single phase formed with nano-sized
grains. The as-deposited films on silicon were annealed at temperatures of 700oC, and the films
deposited on sapphire were annealed at 900oC in the electrical furnace. The effects of PZN addition
on the microstructural evolution were observed using FE-SEM and HR-TEM, and dielectric and
ferroelectric properties of the films were characterized using impedance analyzer and Sawyer-Tower
circuit, respectively. The PZN added PZT film showed poor electrical properties than pure PZT film
when the films were coated on silicon substrate and annealed at 700oC, on the other hand, the PZN
added PZT film showed higher remanent polarization and dielectric constant values then pure PZT
film when the films were coated on sapphire and annealed at 900oC. The ferroelectric and dielectric
characteristics of 20% PZN added PZT films annealed at 900oC were comparable with the values
obtained from bulk ceramic specimen with same composition sintered at 1200oC.
