Effect of Substrate-induced Strains on Ferroelectric and Dielectric Properties of PZT Films Prepared by Sol-Gel Technique

Background: Lead Zirconate Titanate (PZT) films were synthesized by sol gel technique. The growth of films on ITO, Si\SiO2\Ti\Au, Si\Au and Si\SiO2\Ti\Al substrates discussed. In this study, Zirconium nitrate, lead acetate, and Ti (IV) isoproxide used as raw materials. Besides, acetic acid used as a solvent and 2-methoxy ethanol used as a stabilizer for Ti structure. Along with this, PZT films have perovskite structure, thin-film perovskite structure with high dielectric properties and hysteresis loop have been investigated. Methods: The effects of the type’s substrate on dielectric properties the ferroelectric properties were investigated and compared PZT film which deposited in different substrates. The films annealed at 600 C to complete crystalline films. XRD shows tetragonal PZT films have a strong perovskite structure with [100] prefer plane orientation. SEM and crosssection technique used to study for PZT surface films. Results: The dielectric constant at room temperature was different values depending on the types of substrate. The dielectric properties of the PZT films measured at 1 kHz were 120-400 dielectric constant and dielectric loss 0.02-0.08 at room temperature and 1 kHz. Conclusion: The largest remnant polarization (Pr) and coercive field (Ec) are obtained for PZT film deposited on Si\SiO2\Ti\Au substrate, equal to 26.6 mC/cm2 and 38.3 kV/cm, as compared to 16.3 mC/cm2 and 32.2 kV/cm2 for PZT film deposited on ITO substrate.

PZT Thin Films on Silicon Substrates: Formation and Research of Properties

In this paper, we consider the technological features of the formation of thin ferroelectric films of lead zirconate titanate (PZT) by the method of plasma high-frequency reactive sputtering. The crystal structure, morphology and elemental composition of films deposited on silicon and oxidized silicon substrates are investigated. It is shown that the obtained PZT films have a perovskite structure and are polycrystalline with a predominant crystallite growth in the (110) direction. An automated test bench has been designed and manufactured for measuring the electrophysical parameters of ferroelectric films. The measured CV characteristics of the Ni/PZT/Si structure show the hysteresis caused by the polarization of the PZT film. It is noted that the asymmetry of the dependence of the spontaneous polarization on the applied voltage can be caused by the presence of surface states at the PZT/Si interface.

Energy Storage Performance of Sandwich Structured Pb(Zr0.4Ti0.6)O3/BaZr0.2Ti0.8O3/Pb(Zr0.4Ti0.6)O3 Films

We reported a sandwich structured Pb(Zr0.4Ti0.6)O3/BaZr0.2Ti0.8O3/Pb(Zr0.4Ti0.6)O3 (PZT/BZT/PZT) film fabricated by using the sol–gel method, which was dense and uniform with a unique perovskite structure. The PZT/BZT/PZT films displayed high dielectric constants up to 1722.45 at the frequency of 10 kHz. Additionally, the enhanced energy storage density of 39.27 J·cm−3 was achieved at room temperature and 2.00 MV/cm, which was higher than that of the individual BaZr0.2Ti0.8O3 film (21.28 J·cm−3). Furthermore, the energy storage density and efficiency of PZT/BZT/PZT film increased slightly with the increasing temperature from −140 °C to 200 °C. This work proves the feasibility and effectiveness of a sandwich structure in improving dielectric, leakage, and energy storage performances, providing a new paradigm for high-energy–density dielectrics applications.