Observation of band structure on amorphous silicon surface and performance of solar cells with controlled band offsets on hetero-junctions

2012 ◽  
Vol 358 (17) ◽  
pp. 2232-2235 ◽  
Author(s):  
Shintaro Miyanishi ◽  
Hideki Koh ◽  
Yoshiro Takaba ◽  
Ryoji Miyamoto ◽  
Atsushi Gorai ◽  
...  
2014 ◽  
Vol 1666 ◽  
Author(s):  
Takuya Matsui ◽  
Adrien Bidiville ◽  
Hitoshi Sai ◽  
Takashi Suezaki ◽  
Mitsuhiro Matsumoto ◽  
...  

ABSTRACTWe show that high-efficiency and low-degradation hydrogenated amorphous silicon (a-Si:H) p-i-n solar cells can be obtained by depositing absorber layers in a triode-type plasma-enhanced chemical vapor deposition (PECVD) process. Although the deposition rate is relatively low (0.01-0.03 nm/s) compared to the conventional diode-type PECVD process (∼0.2 nm/s), the light-induced degradation in conversion efficiency of single-junction solar cell is substantially reduced (Δη/ηini∼10%) due to the suppression of light-induced metastable defects in the a-Si:H absorber layer. So far, we have attained an independently-confirmed stabilized efficiency of 10.11% for a 220-nm-thick a-Si:H solar cell which was light soaked under 1 sun illumination for 1000 hours at cell temperature of 50°C. We further demonstrate that stabilized efficiencies as high as 10% can be maintained even when the solar cell is thickened to >300 nm.


Author(s):  
K. Hoffman ◽  
P. Nath ◽  
J. Call ◽  
G. DiDio ◽  
C. Vogeli ◽  
...  

2022 ◽  
Author(s):  
Merve Nur Ekmekci ◽  
Ju Hwan Kang ◽  
Yeasin Khan ◽  
Jung Hwa Seo ◽  
Bright Walker

Poly(3,4-ethylenedioxythiophene) : polystyrene sulfonate (PEDOT:PSS) is used ubiquitously in organic solar cells (OSCs) devices, however, it is not clear how the anionic PSS component by itself affects the band structure...


Author(s):  
S.N. Abolmasov ◽  
A.S. Abramov ◽  
A.V. Semenov ◽  
I.S. Shakhray ◽  
E.I. Terukov ◽  
...  

AbstractAttenuated total reflection Fourier transform infrared (ATR FTIR) spectroscopy and effective lifetime measurements have been used to characterize amorphous/crystalline silicon surface passivation in silicon heterojunction solar cells. The comparative studies show a strong link between microstructure factor R * and effective lifetime of amorphous silicon ( a -Si:H) passivation layers incorporating an interface buffer layer, which prevents the epitaxial growth. It is demonstrated that thin a -Si:H films deposited on glass can be used as ATR substrates in this case. The obtained results show that a -Si:H films with R * close to 0.1 are required for manufacturing of high-efficiency (>23%) silicon heterojunction solar cells.


Solar Cells ◽  
1986 ◽  
Vol 17 (2-3) ◽  
pp. 191-200 ◽  
Author(s):  
Tokumi Mase ◽  
Hiroshi Takei ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi

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