Characterization and Microstructural Evolution of Continuous BN Ceramic Fibers Containing Amorphous Silicon Nitride

Boron nitride (BN) ceramic fibers containing amounts of silicon nitride (Si3N4) were prepared using hybrid precursors of poly(tri(methylamino)borazine) (PBN) and polycarbosilane (PCS) via melt-spinning, curing, decarburization under NH3 to 1000 °C and pyrolysis up to 1600 °C under N2. The effect of Si3N4 contents on the microstructure of the BN/Si3N4 composite ceramics was investigated. Series of the BN/Si3N4 composite fibers containing various amounts of Si3N4 from 5 wt% to 25 wt% were fabricated. It was found that the crystallization of Si3N4 could be totally restrained when its content was below 25 wt% in the BN/Si3N4 composite ceramics at 1600 °C, and the amorphous BN/Si3N4 composite ceramic could be obtained with a certain ratio. The mean tensile strength and Young’s modulus of the composite fibers correlated positively with the Si3N4 mass content, while an obvious BN (shell)/Si3N4 (core) was formed only when the Si3N4 content reached 25 wt%.

Effect of Thermal Annealing on the Photoluminescence of Dense Si Nanodots Embedded in Amorphous Silicon Nitride Films

Luminescent amorphous silicon nitride-containing dense Si nanodots were prepared by using very-high-frequency plasma-enhanced chemical vapor deposition at 250 °C. The influence of thermal annealing on photoluminescence (PL) was studied. Compared with the pristine film, thermal annealing at 1000 °C gave rise to a significant enhancement by more than twofold in terms of PL intensity. The PL featured a nanosecond recombination dynamic. The PL peak position was independent of the excitation wavelength and measured temperatures. By combining the Raman spectra and infrared absorption spectra analyses, the enhanced PL was suggested to be from the increased density of radiative centers related to the Si dangling bonds (K0) and N4+ or N20 as a result of bonding configuration reconstruction.

Ultimate suppression of thermal transport in amorphous silicon nitride by phononic nanostructure

Engineering the thermal conductivity of amorphous materials is highly essential for the thermal management of future electronic devices. Here, we demonstrate the impact of ultrafine nanostructuring on the thermal conductivity reduction of amorphous silicon nitride (a-Si3N4) thin films, in which the thermal transport is inherently impeded by the atomic disorders. Ultrafine nanostructuring with feature sizes below 20 nm allows us to fully suppress contribution of the propagating vibrational modes (propagons), leaving only the diffusive vibrational modes (diffusons) to contribute to thermal transport in a-Si3N4. A combination of the phonon-gas kinetics model and the Allen-Feldmann theory reproduced the measured results without any fitting parameters. The thermal conductivity reduction was explained as extremely strong diffusive boundary scattering of both propagons and diffusons. These findings give rise to substantial tunability of thermal conductivity of amorphous materials, which enables us to provide better thermal solutions in microelectronic devices.

Gas phase synthesis of amorphous silicon nitride nanoparticles for high-energy LIBs

We introduce a highly homogenous phase design of Si with N by scalable gas phase synthesis using a specially customized vertical furnace, which tackles the intrinsic challenges of Si anodes.