scholarly journals Influence of interwire angle on undercutting formation and arc behavior in pulsed tandem narrow-gap GMAW

2020 ◽  
Vol 193 ◽  
pp. 108795
Author(s):  
Guoqiang Liu ◽  
Xinhua Tang ◽  
Siyuan Han ◽  
Fenggui Lu ◽  
Haichao Cui
Keyword(s):  
Narrow Gap ◽  
Arc Behavior

scholarly journals The Mechanism of Effect of Flux Bands on The Arc Behavior in Flux Bands Constricting Arc Welding Process

Materials ◽  
2020 ◽  
Vol 13 (7) ◽  
pp. 1652
Author(s):  
Lei Wang ◽  
Jisen Qiao ◽  
Jianhong Chen
Keyword(s):  
Arc Welding ◽  
Solid Wall ◽  
Welding Process ◽  
Welding Current ◽  
Narrow Gap ◽  
The Core ◽  
Arc Behavior ◽  
Before And After ◽  
Arc Shape ◽  
Arc Welding Process

A new welding method, flux bands constricting arc (FBCA) welding, is proposed to compensate for the shortage of insufficient weld width of laser welding T-joints in high steel sandwich panels. The arc behavior (arc burning position, arc shape, arc heat, and arc stability) before and after sticking the flux bands (GMAW and FBCA welding) to the ultra-narrow gap groove was tested. Results indicate that flux bands have solid-wall constricting effect (SWCE) and thermo-compression effect (TCE) on the arc and self-producing slag and gas function in FBCA welding. In ultra-narrow gap groove, the arc burning position climbing up phenomenon (APCP) occurs without flux bands. The SWCE of flux bands on the arc effectively suppresses the APCP because of the insulation of flux bands. In the FBCA welding process, the effective heating area of the arc is increased by at least 5 mm2 compared with that in GMAW. When the groove gap decreases, flux bands not only compress the arc from an inverted bell shape to a rectangular shape, but also make the 660 °C isotherm on the core-plate to increase from 3 mm to 8 mm. In the end, the proportion of unstable arc burning time is reduced by 86.85%, the fluctuation of arc voltage and welding current are also significantly reduced by the flux bands because of their SWCE on the arc.

Properties of Creeping Discharge in Narrow Gap between Dielectric Plates in PFAE Oil

2011 ◽  
Vol 131 (10) ◽  
pp. 817-823
Author(s):  
Takuro Usui ◽  
Ryoichi Hanaoka ◽  
Shinzo Takata ◽  
Yasunori Kanamaru ◽  
Hidenobu Koide ◽  
...  
Keyword(s):  
Narrow Gap ◽  
Creeping Discharge

MATHEMATICAL MODELING OF TEMPERATURE EFFECT ON THE FAN CHART OF MAGNETOABSORPTION SPECTRUM IN SEMICONDUCTORS

2019 ◽  
pp. 104-115
Author(s):  
G. Gulyamov ◽  
U. I. Erkaboev ◽  
A. G. Gulyamov
Keyword(s):  
Mathematical Modeling ◽  
Magnetic Field ◽  
Temperature Dependence ◽  
Density Of States ◽  
Landau Levels ◽  
Joint Density ◽  
Narrow Gap ◽  
Narrow Gap Semiconductors ◽  
Dispersion Law ◽  
The Magnetic Field

The article considers the oscillations of interband magneto-optical absorption in semiconductors with the Kane dispersion law. We have compared the changes in oscillations of the joint density of states with respect to the photon energy for different Landau levels in parabolic and non-parabolic zones. An analytical expression is obtained for the oscillation of the combined density of states in narrow-gap semiconductors. We have calculated the dependence of the maximum photon energy on the magnetic field at different temperatures. A theoretical study of the band structure showed that the magnetoabsorption oscillations decrease with an increase in temperature, and the photon energies nonlinearly depend on a strong magnetic field. The article proposes a simple method for calculating the oscillation of joint density of states in a quantizing magnetic field with the non-quadratic dispersion law. The temperature dependence of the oscillations joint density of states in semiconductors with non-parabolic dispersion law is obtained. Moreover, the article studies the temperature dependence of the band gap in a strong magnetic field with the non-quadratic dispersion law. The method is applied to the research of the magnetic absorption in narrow-gap semiconductors with nonparabolic dispersion law. It is shown that as the temperature increases, Landau levels are washed away due to thermal broadening and density of states turns into a density of states without a magnetic field. Using the mathematical model, the temperature dependence of the density distribution of energy states in strong magnetic fields is considered. It is shown that the continuous spectrum of the density of states, measured at the temperature of liquid nitrogen, at low temperatures turns into discrete Landau levels. Mathematical modeling of processes using experimental values of the continuous spectrum of the density of states makes it possible to calculate discrete Landau levels. We have created the three-dimensional fan chart of magneto optical oscillations of semiconductors with considering for the joint density of energy states. For a nonquadratic dispersion law, the maximum frequency of the absorbed light and the width of the forbidden band are shown to depend nonlinearly on the magnetic field. Modeling the temperature  dependence allowed us to determine the Landau levels in semiconductors in a wide temperature spectrum. Using the proposed model, the experimental results obtained for narrow-gap semiconductors are analyzed. The theoretical results are compared with experimental results.

Structure and Thermoelectric Properties of New Quaternary Tin and Lead Bismuth Selenides, K1+xM4-2xBi7+xSe15 (M = Sn, Pb) and K1+xSn5-xBi11+xSe22

2000 ◽  
Vol 626 ◽  
Author(s):  
Antje Mrotzek ◽  
Kyoung-Shin Choi ◽  
Duck-Young Chung ◽  
Melissa A. Lane ◽  
John R. Ireland ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Single Crystal ◽  
Thermoelectric Properties ◽  
Three Dimensional ◽  
Structure Type ◽  
Narrow Gap ◽  
Low Thermal Conductivity ◽  
Seebeck Coefficients ◽  
Metal Atoms ◽  
Anionic Framework

ABSTRACTWe present the structure and thermoelectric properties of the new quaternary selenides K1+xM4–2xBi7+xSe15 (M = Sn, Pb) and K1-xSn5-xBi11+xSe22. The compounds K1+xM4-2xBi7+xSe15 (M= Sn, Pb) crystallize isostructural to A1+xPb4-2xSb7+xSe15 with A = K, Rb, while K1-xSn5-xBi11+xSe22 reveals a new structure type. In both structure types fragments of the Bi2Te3-type and the NaCl-type are connected to a three-dimensional anionic framework with K+ ions filled tunnels. The two structures vary by the size of the NaCl-type rods and are closely related to β-K2Bi8Se13 and K2.5Bi8.5Se14. The thermoelectric properties of K1+xM4-2xBi7+xSe15 (M = Sn, Pb) and K1-xSn5-xBi11+xSe22 were explored on single crystal and ingot samples. These compounds are narrow gap semiconductors and show n-type behavior with moderate Seebeck coefficients. They have very low thermal conductivity due to an extensive disorder of the metal atoms and possible “rattling” K+ ions.

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