New red phosphor for near-ultraviolet light-emitting diodes with high color-purity

2010 ◽  
Vol 45 (2) ◽  
pp. 240-242 ◽  
Author(s):  
Zhengliang Wang ◽  
Pei He ◽  
Rui Wang ◽  
Jishou Zhao ◽  
Menglian Gong
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Color Purity ◽  
Red Phosphor ◽  
Light Emitting ◽  
Near Ultraviolet ◽  
Ultraviolet Light Emitting Diodes ◽  
High Color Purity

Red phosphor Li2Mg2(WO4)3: Eu3+ with lyonsite structure for near ultraviolet light-emitting diodes

Displays ◽  
2016 ◽  
Vol 43 ◽  
pp. 18-22 ◽  
Author(s):  
Zhongfei Mu ◽  
Enhai Song ◽  
Daoyun Zhu ◽  
Junqin Feng ◽  
Yanting Yang
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Red Phosphor ◽  
Light Emitting ◽  
Near Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

A novel near-ultraviolet-light excitable Eu3+-doped Sr2LaTaO6 red phosphor for white-light-emitting diodes

Optik ◽  
2021 ◽  
Vol 240 ◽  
pp. 166908
Author(s):  
Qifeng Tang ◽  
Tao Yang ◽  
Haifeng Huang ◽  
Jinqing Ao ◽  
Biyou Peng ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
White Light ◽  
Light Emitting Diodes ◽  
Red Phosphor ◽  
Light Emitting ◽  
Near Ultraviolet ◽  
White Light Emitting Diodes

Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes

2003 ◽  
Vol 83 (24) ◽  
pp. 4906-4908 ◽  
Author(s):  
Satoshi Watanabe ◽  
Norihide Yamada ◽  
Masakazu Nagashima ◽  
Yusuke Ueki ◽  
Chiharu Sasaki ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Light Emitting ◽  
Highly Efficient ◽  
Near Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

scholarly journals Enhanced Radiative Recombination Rate by Local Potential Fluctuation in InGaN/AlGaN Near-Ultraviolet Light-Emitting Diodes

2019 ◽  
Vol 9 (5) ◽  
pp. 871 ◽  
Author(s):  
Abu Islam ◽  
Dong-Soo Shim ◽  
Jong-In Shim
Keyword(s):  
Potential Energy ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Energy Fluctuation ◽  
Light Emitting ◽  
Near Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

We investigate the differences in optoelectronic performances of InGaN/AlGaN multiple-quantum-well (MQW) near-ultraviolet light-emitting diodes by using samples with different indium compositions. Various macroscopic characterizations have been performed to show that the strain-induced piezoelectric field (FPZ), the crystal quality, and the internal quantum efficiency increase with the sample’s indium composition. This improved performance is owing to the carrier recombination at relatively defect-free indium-rich localized sites, caused by the local in-plane potential-energy fluctuation in MQWs. The potential-energy fluctuation in MQWs are considered to be originating from the combined effects of the inhomogeneous distribution of point defects, FPZ, and indium compositions.

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