DFT computation of quantum capacitance of transition-metals and vacancy doped Sc2CF2 MXene for supercapacitor applications

The density of states and quantum capacitance of pure and doped Nb2N and Nb4N3 single-layer and multi-layer bulk structures are investigated using density functional theory calculations. The calculated value of quantum capacitance is quite high for pristine Nb2N and decent for Nb4N3 structures. However for cobalt-doped unpolarized structures, significant increase in quantum capacitance at Fermi level is observed in the case of Nb4N3 as compared to minor increase in case of Nb2N. These results show that pristine and doped Nb2N and Nb4N3 can be preferred over graphene as the electrode material for supercapacitors. The spin and temperature dependences of quantum capacitance for these structures are also investigated.

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Investigation of electrochemical properties of various transition metals doped SnO2 spherical nanostructures for supercapacitor applications

Journal of Energy Storage ◽

10.1016/j.est.2020.101530 ◽

2020 ◽

Vol 31 ◽

pp. 101530 ◽

Cited By ~ 3

Author(s):

S. Asaithambi ◽

P. Sakthivel ◽

M. Karuppaiah ◽

G. Udhaya Sankar ◽

K. Balamurugan ◽

...

Keyword(s):

Transition Metals ◽

Electrochemical Properties ◽

Supercapacitor Applications

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Computational screening toward quantum capacitance of transition-metals and vacancy doped/co-doped graphene as electrode of supercapacitors

Electrochimica Acta ◽

10.1016/j.electacta.2021.138432 ◽

2021 ◽

pp. 138432

Author(s):

Bo Zhang ◽

Zhijian Peng ◽

Li Song ◽

Xiaojun Wu ◽

Xiuli Fu

Keyword(s):

Transition Metals ◽

Quantum Capacitance ◽

Computational Screening ◽

Doped Graphene ◽

Co Doped

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Precipitation in silicon: Microanalysis

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100104431 ◽

1988 ◽

Vol 46 ◽

pp. 474-475

Author(s):

R.W. Carpenter

Keyword(s):

Transition Metals ◽

Spatial Resolution ◽

Thin Foil ◽

Precipitation Reaction ◽

High Current ◽

Reaction Products ◽

Carbon And Nitrogen ◽

Dielectric Layers ◽

Precipitation Processes ◽

Areas Of Interest

Interest in precipitation processes in silicon appears to be centered on transition metals (for intrinsic and extrinsic gettering), and oxygen and carbon in thermally aged materials, and on oxygen, carbon, and nitrogen in ion implanted materials to form buried dielectric layers. A steadily increasing number of applications of microanalysis to these problems are appearing. but still far less than the number of imaging/diffraction investigations. Microanalysis applications appear to be paced by instrumentation development. The precipitation reaction products are small and the presence of carbon is often an important consideration. Small high current probes are important and cryogenic specimen holders are required for consistent suppression of contamination buildup on specimen areas of interest. Focussed probes useful for microanalysis should be in the range of 0.1 to 1nA, and estimates of spatial resolution to be expected for thin foil specimens can be made from the curves shown in Fig. 1.

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