Carrier emission from the electronic states of self-assembled indium arsenide quantum dots

2006 ◽  
Vol 26 (5-7) ◽  
pp. 760-765 ◽  
Author(s):  
S.W. Lin ◽  
A.M. Song ◽  
M. Missous ◽  
I.D Hawkins ◽  
B. Hamilton ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Indium Arsenide ◽  
Electronic States ◽  
Self Assembled

Assessing electronic states of InAsP/GaAs self-assembled quantum dots by photoluminescence and modulation spectroscopy

2019 ◽  
Vol 206 ◽  
pp. 639-644 ◽  
Author(s):  
Rafaela Moos ◽  
Igor Konieczniak ◽  
Graciely Elias dos Santos ◽  
Ângelo Luiz Gobbi ◽  
Ayrton André Bernussi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electronic States ◽  
Modulation Spectroscopy ◽  
Self Assembled

scholarly journals Effect of magnetic field and impurities in InAs/GaAs and GaN/AlN self-assembled quantum dots

2019 ◽  
Vol 65 (3) ◽  
pp. 231
Author(s):  
G. Linares García ◽  
And L. Meza-Montes
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Probability Density ◽  
Electronic States ◽  
Zeeman Splitting ◽  
Growth Direction ◽  
Two Systems ◽  
Piezoelectric Effects ◽  
Self Assembled ◽  
The Magnetic Field

A theoeritical study on the effect of a magnetic field or impurities on the carries states of self-assembled quantum dots is presented. The magnetic field is applied along the growth direction of the dots, and for comparison two systems are considered, InAs embeded in GaAs, and GaN in AlN. The electronic states and energy are calculated in the framework of the k.p theory in 8 bands including the strain and piezoelectric effects. Zeeman splitting and anticrossings are observed in InAs/GaAs, while the field introduces small changes in the nitrides. It is also included a study about hidrogen-like impurities, which may be negative or positive. It is noted that depending on the type of impurity, the confinement energy of carriers is changed, and the distribution of the probability density of the carriers is affected  too.

Effect of In–Ga intermixing on the electronic states in self-assembled InAs quantum dots probed by nanogap electrodes

2009 ◽  
Vol 94 (16) ◽  
pp. 162107 ◽  
Author(s):  
K. Shibata ◽  
M. Jung ◽  
K. M. Cha ◽  
M. Sotome ◽  
K. Hirakawa
Keyword(s):  
Quantum Dots ◽  
Electronic States ◽  
Inas Quantum Dots ◽  
Self Assembled ◽  
Nanogap Electrodes

Assessing the electronic states of InAsP/GaAs self-assembled quantum dots by photolumincescence and modulation spectroscopy

2017 ◽  
Author(s):  
Rafaela Moos ◽  
Igor Konieczniak ◽  
Graciely Elias dos Santos ◽  
Angelo Gobbi ◽  
Ayrton André Bernussi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electronic States ◽  
Modulation Spectroscopy ◽  
Self Assembled

The vertical coupling effect on the electronic states in self-assembled InAs/GaAs quantum dots

2006 ◽  
Vol 90 (10) ◽  
pp. 1371-1380 ◽  
Author(s):  
M. Arfaoui ◽  
L. Bouzaïene ◽  
M. Fliyou ◽  
L. Sfaxi ◽  
H. Maaref
Keyword(s):  
Quantum Dots ◽  
Coupling Effect ◽  
Electronic States ◽  
Vertical Coupling ◽  
Self Assembled

Identification of atomic-like electronic states in indium arsenide nanocrystal quantum dots

Nature ◽  
10.1038/22979 ◽  
1999 ◽  
Vol 400 (6744) ◽  
pp. 542-544 ◽  
Author(s):  
Uri Banin ◽  
YunWei Cao ◽  
David Katz ◽  
Oded Millo
Keyword(s):  
Quantum Dots ◽  
Indium Arsenide ◽  
Electronic States ◽  
Nanocrystal Quantum Dots

Electronic states and tunneling times in coupled self-assembled quantum dots

2001 ◽  
Vol 30 (5) ◽  
pp. 279-285 ◽  
Author(s):  
R López-Bolaños ◽  
G.H Cocoletzi ◽  
S.E Ulloa
Keyword(s):  
Quantum Dots ◽  
Electronic States ◽  
Tunneling Times ◽  
Self Assembled
Sign in / Sign up

Export Citation Format

Share Document