Phase transformation kinetics and optical properties of Ga–Se–Sb phase-change thin films

2013 ◽  
Vol 16 (3) ◽  
pp. 884-892 ◽  
Author(s):  
F.A. Al-Agel ◽  
E.A. Al-Arfaj ◽  
F.M. Al-Marzouki ◽  
Shamshad A. Khan ◽  
Zishan H. Khan ◽  
...  
2017 ◽  
Vol 371 ◽  
pp. 160-165
Author(s):  
Vladimir Burlaka ◽  
Kai Nörthemann ◽  
Astrid Pundt

It was recently shown that phases forming in thin films undergo a coherency state change depending on the film thickness. For Nb-H thin films, the coherency state was reported to change at about 38 nm. In this study the impact of the coherency state on the phase transformation kinetics is investigated for Nb films of two different film thicknesses (25 nm and 80 nm), below and above the state change thickness. The phase transformation in thin metal-hydrogen films can be studied by surface topography analyses via scanning tunneling microscopy (STM) because of the strong local lattice expansion of the hydride precipitates. STM on Nb-H reveals fast phase transformation kinetics for the 25 nm Nb-film, and much slower kinetics for the 80 nm film. This is suggested to be related to the change in the coherency between the Nb-matrix and the hydride precipitates.


2003 ◽  
Vol 803 ◽  
Author(s):  
Sang Youl Kim

ABSTRACTThe recent research works of optical properties and crystallization kinetics of phase change Ge-Sb-Te-(N) alloy by using ellipsometry are reviewed.The complex refractive index spectra of phase-change Ge2Sb2+xTe5 thin films and those of the nitrogen Ge2Sb2Te5 thin films have been determined.The crystallization behavior of amorphous Ge2Sb2Te5 thin films investigated by in situ ellipsometry revealed that the crystallization process of Ge2Sb2Te5 near 140°C is a two-step process. The kinetic exponent of the Johnson-Mehl-Avrami equation was about 4.4 for the first stage and 1.1 for the second stage. Ex situ study confirmed the cascaded crystallization behavior of phase-change Ge2Sb2Te5 films.A passive type single wavelength ellipsometer adopting a DOAP (division-of-amplitude photopolarimeter) configuration with nanosecond time resolution is developed to monitor the phase transformation of Ge2Sb2Te5 caused by a high power nanosecond laser pulse in real time. The two-step process - the fast nucleation-dominant stage followed by the slow anomalous grain growth stage is confirmed.Based on the recent analysis of the ellipsometric isotherm at moderately elevated temperature, we found for the first time that the fast nucleation dominant crystallization of Ge2Sb2Te 5 can be better explained by a modified JMA equation that illustrates the nucleation dominated process where the creation rate of a new nucleus is proportional to the density of preexisting nuclei and growth rate is negligible.


2004 ◽  
Vol 345-346 ◽  
pp. 173-177 ◽  
Author(s):  
B. Laine ◽  
C. Rivera-Rodrı́gues ◽  
E. Morales-Sánchez ◽  
E. Prokhorov ◽  
G. Trapaga ◽  
...  

1987 ◽  
Vol 50 (21) ◽  
pp. 1488-1490 ◽  
Author(s):  
K. A. Rubin ◽  
R. W. Barton ◽  
M. Chen ◽  
V. B. Jipson ◽  
D. Rugar

2016 ◽  
Vol 612 ◽  
pp. 437-444 ◽  
Author(s):  
M.M. Moghadam ◽  
E.L. Pang ◽  
T. Philippe ◽  
P.W. Voorhees

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