Sillén-Aurivillius phase bismuth niobium oxychloride, Bi4NbO8Cl, as a New Oxide Ion Conductor

Sillén-Aurivillius phase Bi4NbO8Cl consists of Bi2O22+/NbO43-/Bi2O22+/Cl- layers and the partial substitution of Bi was successfully performed by Ca2+, Sr2+, Ba2+, La3+, Ga3+ and Sn4+. It was found that substitution with...

Hydrothermal synthesis of ABi2Ta2O9Aurivillius phase: A comparative study of A-site cation size on structure, dielectric, optical properties

In this study, the double-layered Aurivillius phases CaBi2Ta2O9 (CBT) and PbBi2Ta2O9 (PBT) were prepared through a hydrothermal route with NaOH as a mineralizer. XRD analysis confirmed that the CBT and PBT compounds were successfully formed and adopted an orthorhombic crystal structure with an [Formula: see text]21am symmetry. Le Bail refinements of XRD data indicated that the unit cell volume of CBT was smaller than PBT and is associated with the smaller ionic radius of Ca[Formula: see text] compared to Pb[Formula: see text]. The surface morphology of both samples, as determined using SEM, demonstrated plate-like grains with anisotropic grain growth. It was found that the different ionic radii of [Formula: see text]-site cations (Ca[Formula: see text] and Pb[Formula: see text] strongly affected the structural, optical and electrical properties of the Aurivillius phase. The occupation of smaller Ca[Formula: see text] cations induced a higher structural distortion, which resulted in higher bandgap ([Formula: see text] energy and ferroelectric transition temperature ([Formula: see text] of CBT, compared to those of PBT.

Synthesis and thermal behavior of nanoceramic material based on Bi13Fe5Ti6O39

The process of formation by the chemical coprecipitation method of nanoceramic material based on layered perovskite-like complex oxide Bi13Fe5Ti6O39 with the structure of the Aurivillius phase has been described. The temperatures of the onset of formation, the onset of decomposition, and activation of sintering, as well as the coefficient of linear thermal extension of the material, have been determined. Technological parameters for the synthesis of the material with a high yield of the target product and the ability to vary the crystallite size in the range of 70‒85 nm have been determined.

Microstructures and Electrical Conduction Behaviors of Gd/Cr Codoped Bi3TiNbO9 Aurivillius Phase Ceramic

In this work, a kind of Gd/Cr codoped Bi3TiNbO9 Aurivillius phase ceramic with the formula of Bi2.8Gd0.2TiNbO9 + 0.2 wt% Cr2O3 (abbreviated as BGTN−0.2Cr) was prepared by a conventional solid-state reaction route. Microstructures and electrical conduction behaviors of the ceramic were investigated. XRD and SEM detection found that the BGTN−0.2Cr ceramic was crystallized in a pure Bi3TiNbO9 phase and composed of plate-like grains. A uniform element distribution involving Bi, Gd, Ti, Nb, Cr, and O was identified in the ceramic by EDS. Because of the frequency dependence of the conductivity between 300 and 650 °C, the electrical conduction mechanisms of the BGTN−0.2Cr ceramic were attributed to the jump of the charge carriers. Based on the correlated barrier hopping (CBH) model, the maximum barrier height WM, dc conduction activation energy Ec, and hopping conduction activation energy Ep were calculated with values of 0.63 eV, 1.09 eV, and 0.73 eV, respectively. Impedance spectrum analysis revealed that the contribution of grains to the conductance increased with rise in temperature; at high temperatures, the conductance behavior of grains deviated from the Debye relaxation model more than that of grain boundaries. Calculation of electrical modulus further suggested that the degree of interaction between charge carriers β tended to grow larger with rising temperature. In view of the approximate relaxation activation energy (~1 eV) calculated from Z’’ and M’’ peaks, the dielectric relaxation process of the BGTN−0.2Cr ceramic was suggested to be dominated by the thermally activated motion of oxygen vacancies as defect charge carriers. Finally, a high piezoelectricity of d33 = 18 pC/N as well as a high resistivity of ρdc = 1.52 × 105 Ω cm at 600 °C provided the BGTN−0.2Cr ceramic with promising applications in the piezoelectric sensors with operating temperature above 600 °C.

Charged Domain Wall and Polar Vortex Topologies in a Room Temperature Magnetoelectric Multiferroic Thin Film

Multiferroic topologies are an emerging solution for future low-power magnetic nanoelectronics due to their combined tuneable functionality and mobility. Here, we show that in addition to being magnetoelectric multiferroic at room temperature, thin film Aurivillius phase Bi6TixFeyMnzO18 is an ideal material platform for both domain wall and vortex topology based nanoelectronic devices. Utilising atomic resolution electron microscopy, we reveal the presence and structure of 180˚ type charged head-to-head and tail-to-tail domain walls passing throughout the thin film. Theoretical calculations confirm the sub-unit cell cation site preference and charged domain wall energetics for Bi6TixFeyMnzO18. Finally, we show that polar vortex type topologies also form at out-of-phase boundaries of stacking faults when internal strain and electrostatic energy gradients are altered. This study could pave the way for controlled polar vortex topology formation via strain engineering in other multiferroic thin films. Moreover, these results confirm the sub-unit-cell topological features play an important role in controlling the charge and spin state of Aurivillius phase films and other multiferroic heterostructures.

Charged Domain Wall and Polar Vortex Topologiesin a Room Temperature Magnetoelectric Multiferroic Thin Film

Multiferroic domain walls are an emerging solution for future low-power nanoelectronics due to their combined tuneable functionality and mobility. Here we show that the magnetoelectric multiferroic Aurivillius phase Bi6TixFeyMnzO18 (B6TFMO) crystal is an ideal platform for domain wall-based nanoelectronic devices. The unit cell of B6TFMO is distinctive as it consists of a multiferroic layer between dielectric layers. We utilise atomic resolution scanning transmission electron microscopy and spectroscopy to map the sub-unit-cell polarisation in B6TFMO thin films. 180˚ charged head-to-head and tail-to-tail domain walls are found to pass through > 8 ferroelectric-dielectric layers of the film. They are structurally similar to BiFeO3 DWs but contain a large surface charge density (σ_s) = 1.09 |e|per perovskite cell, where |e| is elementary charge. Although polarisation is primarily in-plane, c-axis polarisation is identified at head-to-tail domain walls with an associated electromechanical coupling of strain and polarisation. Finally, we reveal that with controlled strain engineering during thin film growth, room-temperature vortexes are formed in the ferroelectric layer. These results confirm that sub-unit-cell topological features can play an important role in controlling the conduction properties and magnetisation state of Aurivillius phase films and other multiferroic heterostructures.