Investigation of light output performance for gallium nitride-based light-emitting diodes grown on different shapes of patterned sapphire substrate

2015 ◽  
Vol 33 ◽  
pp. 149-153 ◽  
Author(s):  
Guofeng Yang ◽  
Jianjun Chang ◽  
Jianli Zhao ◽  
Yuying Tong ◽  
Feng Xie ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Sapphire Substrate ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Patterned Sapphire Substrate ◽  
Light Emitting ◽  
Output Performance ◽  
Different Shapes

Enhancement of light output power on GaN-based light-emitting diodes using two-direction stripe-patterned sapphire substrate

2014 ◽  
Vol 11 (3-4) ◽  
pp. 722-725
Author(s):  
Koji Okuno ◽  
Takahide Oshio ◽  
Naoki Shibata ◽  
Yoshio Honda ◽  
Masahito Yamaguchi ◽  
...  
Keyword(s):  
Output Power ◽  
Sapphire Substrate ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Light Output Power ◽  
Patterned Sapphire Substrate ◽  
Light Emitting

Light Output Enhancement of GaN-Based Light-Emitting Diodes by Optimizing SiO2Nanorod-Array Depth Patterned Sapphire Substrate

2012 ◽  
Vol 51 (4S) ◽  
pp. 04DG11 ◽  
Author(s):  
Ching-Hsueh Chiu ◽  
Po-Min Tu ◽  
Shih-Pang Chang ◽  
Chien-Chung Lin ◽  
Chung-Ying Jang ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Patterned Sapphire Substrate ◽  
Light Emitting

Light Output Enhancement of GaN-Based Light-Emitting Diodes by Optimizing SiO$_{2}$ Nanorod-Array Depth Patterned Sapphire Substrate

2012 ◽  
Vol 51 ◽  
pp. 04DG11 ◽  
Author(s):  
Ching-Hsueh Chiu ◽  
Po-Min Tu ◽  
Shih-Pang Chang ◽  
Chien-Chung Lin ◽  
Chung-Ying Jang ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Nanorod Array ◽  
Patterned Sapphire Substrate ◽  
Light Emitting

scholarly journals Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H3PO4-Based Etchant

Micromachines ◽  
2018 ◽  
Vol 9 (12) ◽  
pp. 622 ◽  
Author(s):  
Wen-Yang Hsu ◽  
Yuan-Chi Lian ◽  
Pei-Yu Wu ◽  
Wei-Min Yong ◽  
Jinn-Kong Sheu ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Light Emitting Diodes ◽  
Ex Situ ◽  
Initial Growth ◽  
Patterned Sapphire Substrate ◽  
Light Emitting ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

Micron-sized patterned sapphire substrates (PSS) are used to improve the performance of GaN-based light-emitting diodes (LEDs). However, the growth of GaN is initiated not only from the bottom c-plane but also from the sidewall of the micron-sized patterns. Therefore, the coalescence of these GaN crystals creates irregular voids. In this study, two kinds of nucleation layers (NL)—ex-situ AlN NL and in-situ GaN NL—were used, and the growth of sidewall GaN was successfully suppressed in both systems by modifying the micron-sized PSS surface.

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