InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode

2002 ◽  
Vol 41 (Part 2, No. 12B) ◽  
pp. L1431-L1433 ◽  
Author(s):  
Motokazu Yamada ◽  
Tomotsugu Mitani ◽  
Yukio Narukawa ◽  
Shuji Shioji ◽  
Isamu Niki ◽  
...  
2009 ◽  
Vol 21 (21) ◽  
pp. 2221-2225 ◽  
Author(s):  
Yuan-Chieh Chiu ◽  
Jui-Yi Hung ◽  
Yun Chi ◽  
Chung-Chia Chen ◽  
Chih-Hao Chang ◽  
...  

1975 ◽  
Vol 27 (12) ◽  
pp. 697-699 ◽  
Author(s):  
Hirohiko Katayama ◽  
Shunri Oda ◽  
Hiroshi Kukimoto

2013 ◽  
Vol 321-324 ◽  
pp. 474-477
Author(s):  
Xin Yu Yu ◽  
Jun Zhang ◽  
Zhe Chen ◽  
Meng Yuan Xie ◽  
Jian Hui Yu ◽  
...  

Patterned sapphire substrate (PSS) is effective approach to improve external quantum efficiency of light emitting diode (LED) chip. The round holes pattern was studied in this paper. Simulation was used to study how external quantum efficiency changes in different parameters of the round holes for flip GaN-based LEDs fabricated round holes PSS. Through a series of comparisons on simulation results, the maximum enhancement of LED’s external quantum efficiency is 15% compared to the external quantum efficiency of non-patterned sapphire substrate (non-PSS) LED for a most effective pattern.


1982 ◽  
Vol 53 (10) ◽  
pp. 6962-6967 ◽  
Author(s):  
L. Hoffmann ◽  
G. Ziegler ◽  
D. Theis ◽  
C. Weyrich

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