Further Improvement in the Light Output Power of InGaN-Based Light Emitting Diodes by Patterned Sapphire Substrate with KOH Wet-Chemical Etching on Sidewall

We demonstrated that the tetramethylammonium hydroxide (TMAH) solution possesses different etching abilities to the chip sidewalls with different orientations because the orientation of chip sidewall determines the exposed crystallographic plane of gallium nitride (GaN) and these crystallographic planes are with different chemical stability to the TMAH solution. After TMAH etching treatment, trigonal prisms were observed on sidewalls where m-plane GaN was exposed. For the investigated two types of light-emitting diodes (LEDs) with orthogonal arrangements, the LEDs with their larger sidewalls orientated along the [11–20] direction exhibited an additional 10% improvement in light output power after TMAH etching treatment compared to the LEDs with larger sidewalls orientated along the [1–100] direction.

Download Full-text

Improved Light Output Power of GaN-Based Light-Emitting Diodes Using Double Photonic Quasi-Crystal Patterns

IEEE Electron Device Letters ◽

10.1109/led.2009.2029985 ◽

2009 ◽

Vol 30 (11) ◽

pp. 1152-1154 ◽

Cited By ~ 16

Author(s):

Hung-Wen Huang ◽

Chung-Hsiang Lin ◽

Zhi-Kai Huang ◽

Kang-Yuan Lee ◽

Chang-Chin Yu ◽

...

Keyword(s):

Output Power ◽

Light Emitting Diodes ◽

Light Output ◽

Light Output Power ◽

Light Emitting

Download Full-text

Enhancing Light Output Power of InGaN-Based Light-Emitting Diodes with an Embedded Self-Textured Oxide Mask Structure

Journal of The Electrochemical Society ◽

10.1149/2.071112jes ◽

2011 ◽

Vol 158 (12) ◽

pp. H1242 ◽

Cited By ~ 4

Author(s):

Wen-Yu Lin ◽

Kun-Ching Shen ◽

Ray-Hua Horng ◽

Dong-Sing Wuu

Keyword(s):

Output Power ◽

Light Emitting Diodes ◽

Light Output ◽

Light Output Power ◽

Light Emitting

Download Full-text

Improved performance of GaN-based light emitting diodes with nanopatterned sapphire substrates fabricated by wet chemical etching

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4916687 ◽

2015 ◽

Vol 33 (3) ◽

pp. 032402

Author(s):

Chong Geng ◽

Qingfeng Yan ◽

Peng Dong ◽

Liang Shan ◽

Chengxiao Du ◽

...

Keyword(s):

Chemical Etching ◽

Light Emitting Diodes ◽

Light Emitting ◽

Sapphire Substrates ◽

Wet Chemical ◽

Wet Chemical Etching ◽

Improved Performance

Download Full-text

Electroluminescence Properties of Eu-doped GaN-based Light-emitting Diodes Grown by Organometallic Vapor Phase Epitaxy

MRS Proceedings ◽

10.1557/opl.2011.994 ◽

2011 ◽

Vol 1342 ◽

Cited By ~ 11

Author(s):

Atsushi Nishikawa ◽

Naoki Furukawa ◽

Dong-gun Lee ◽

Kosuke Kawabata ◽

Takanori Matsuno ◽

...

Keyword(s):

Layer Thickness ◽

Output Power ◽

Active Layer ◽

Vapor Phase ◽

Light Emitting Diodes ◽

Light Output ◽

Active Layer Thickness ◽

Organometallic Vapor Phase Epitaxy ◽

Light Output Power ◽

Light Emitting

ABSTRACTWe investigated the electroluminescence (EL) properties of Eu-doped GaN-based light-emitting diodes (LEDs) grown by organometallic vapor phase epitaxy (OMVPE). The thickness of the active layer was varied to increase the light output power. With increasing the active layer thickness, the light output power monotonically increased. The maximum light output power of 50 μW was obtained for an active layer thickness of 900 nm with an injected current of 20 mA, which is the highest value ever reported. The corresponding external quantum efficiency was 0.12%. The applied voltage for the LED operation also increased with the active layer thickness due to an increase in the resistance of the LED. Therefore, in terms of power efficiency, the optimized active layer thickness was around 600 nm. These results indicate that the optimization of the LED structure would effectively improve the luminescence properties.

Download Full-text