First-principle investigation on the thermoelectric properties of XCoGe (X = V, Nb, and Ta) half-Heusler compounds

2022 ◽  
Vol 140 ◽  
pp. 106387
Author(s):  
Xilin Xiong ◽  
Rundong Wan ◽  
Zhengfu Zhang ◽  
Ying Lei ◽  
Guocai Tian
Author(s):  
Bindu Rani ◽  
Aadil Wani ◽  
Utkir Sharopov ◽  
Kulwinder Kaur ◽  
Shobhna Dhiman

Half heusler compounds have gained attention due to their excellent properties and good thermal stability. In this paper, using first principle calculation and Boltzmann transport equation, we have investigated structural, electronic, mechanical and thermoelectric properties of PdXSn (X=Zr,Hf) half Heusler materials. These materials are indirect band gap semiconductors with band gap of 0.52 (0.44) for PdZrSn (PdHfSn). Calculations of elastic and phonon characteristics show that both materials are mechanically and dynamically stable. At 300K the magnitude of lattice thermal conductivity observed for PdZrSn is 15.16 W/mK and 9.53 W/mK for PdHfSn. The highest ZT value for PdZrSn and PdHfSn is 0.32 and 0.4 respectively.


2019 ◽  
Vol 6 (4) ◽  
pp. 045901 ◽  
Author(s):  
Q Mahmood ◽  
M Yaseen ◽  
M Hassan ◽  
M S Rashid ◽  
Iskander Tlili ◽  
...  

2019 ◽  
Vol 292 ◽  
pp. 17-23 ◽  
Author(s):  
Q. Mahmood ◽  
Bakhtiar Ul Haq ◽  
M. Yaseen ◽  
Shahid M. Ramay ◽  
Muhammad Gul Bahar Ashiq ◽  
...  

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