Light Amplification by Quantum Confinement (LAQC) in quantum optical lithography

2021 ◽  
Vol 143 ◽  
pp. 107287
Author(s):  
Eugen Pavel
Keyword(s):  
Quantum Confinement ◽  
Optical Lithography ◽  
Light Amplification ◽  
Quantum Optical

Nanopatterning of monolayer graphene by quantum optical lithography

2021 ◽  
Vol 60 (6) ◽  
pp. 1674
Author(s):  
Eugen Pavel ◽  
Virgil Marinescu ◽  
Marius Lungulescu
Keyword(s):  
Optical Lithography ◽  
Monolayer Graphene ◽  
Quantum Optical

Graphene nanopatterning by Quantum Optical Lithography

Optik ◽  
2020 ◽  
Vol 203 ◽  
pp. 163532
Author(s):  
E. Pavel ◽  
V. Marinescu ◽  
M. Lungulescu
Keyword(s):  
Optical Lithography ◽  
Quantum Optical

Recent advances in 3- to 10-nm quantum optical lithography

2019 ◽  
Vol 18 (02) ◽  
pp. 1 ◽  
Author(s):  
Eugen Pavel ◽  
Gabriel Prodan ◽  
Virgil Marinescu ◽  
Roxana Trusca
Keyword(s):  
Optical Lithography ◽  
Recent Advances ◽  
Quantum Optical

Quantum optical lithography from 1nm resolution to pattern transfer on silicon wafer

2014 ◽  
Vol 60 ◽  
pp. 80-84 ◽  
Author(s):  
E. Pavel ◽  
S.I. Jinga ◽  
B.S. Vasile ◽  
A. Dinescu ◽  
V. Marinescu ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Optical Lithography ◽  
Pattern Transfer ◽  
Quantum Optical

2 nm Quantum Optical Lithography

2013 ◽  
Vol 291 ◽  
pp. 259-263 ◽  
Author(s):  
E. Pavel ◽  
S. Jinga ◽  
E. Andronescu ◽  
B.S. Vasile ◽  
G. Kada ◽  
...  
Keyword(s):  
Optical Lithography ◽  
Quantum Optical

Electrical Characterisation of Highly Doped Triangular Silicon Nanowires

2014 ◽  
Vol 660 ◽  
pp. 168-172
Author(s):  
Nor F. Za’bah ◽  
Kelvin S.K. Kwa ◽  
Anthony O'Neill
Keyword(s):  
Silicon Nanowires ◽  
Quantum Confinement ◽  
Carrier Mobility ◽  
Quantum Confinement Effect ◽  
Silicon Nanowire ◽  
Optical Lithography ◽  
Silicon On Insulator ◽  
Top Down ◽  
Depletion Effect ◽  
Effective Mobility

A top-down silicon nanowire fabrication using a combination of optical lithography and orientation dependent etching (ODE) has been developed using <100> Silicon-on Insulator (SOI) as the starting substrate. Initially, the samples were doped with phosphorus using the diffusion process resulting in carrier concentration of 2 x 1018cm-3. After the silicon nanowires were fabricated, they were measured using a dual configuration method which is similar to the four-point probe measurement technique to deduce its resistivity. The data obtained had suggested that doping distribution in the silicon nanowires were lower and this may have been affected by the surface depletion effect. In addition, with respect to carrier mobility, the effective mobility of electrons extracted using the four-point probe data had demonstrated that the mobility of carriers in the silicon nanowire is comparable with the bulk mobility. This is most probably due to the fact that in this research, the quantum confinement effect on these nanowires is not significant.

Quantum state transfer in a quantum network: a quantum-optical implementation

1997 ◽  
Vol 44 (10) ◽  
pp. 1727-1736 ◽  
Author(s):  
S. J. VAN ENK , J. I. CIRAC , P. ZOLLE
Keyword(s):  
Quantum State ◽  
Quantum Network ◽  
Quantum State Transfer ◽  
State Transfer ◽  
Quantum Optical
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