Momentum-dependent resonant inelastic X-ray scattering at the Si K edge of 3C-SiC: A theoretical study on a relation between spectra and valence band dispersion
The valence band electronic structures of mixed uranium oxides (UO2, U4O9, U3O7, U3O8, and β-UO3) have been studied using the resonant inelastic X-ray scattering (RIXS) technique at the U M5 edge and computational methods.