Pinning effects on hot-electron vortex flow instability in superconducting films

The experimental investigations of the vortex flow inside the vortex finder (outlet duct) of the cyclone dust separator have been carried out. Preliminary study from the visualization experiment has been performed and discovered vortex instability inside the conventional vortex finder. In order to minimize the instabilities, the streamlined entry shape was inserted at the vortex finder entrance and the results showed remarkable improvement of the vortex flow instability inside the vortex finder. The velocity measurements of two main components of velocity were performed using a laser-Doppler anemometry at the cyclone vortex finder outlet. The experiments were conducted at a constant flow rate of 0.0246m3/s with the vortex finder diameter of 64mm and with several types of entrance configuration in order to improve the cyclone performance and to reduce the losses. The use of deswirl devices inside the vortex finder significantly reduced pressure drop and energy losses.

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Vortex flow and shot noise in the quantum-liquid phase of thick amorphous superconducting films

Physical Review B ◽

10.1103/physrevb.74.144509 ◽

2006 ◽

Vol 74 (14) ◽

Cited By ~ 9

Author(s):

S. Okuma ◽

K. Kainuma ◽

M. Kohara

Keyword(s):

Liquid Phase ◽

Shot Noise ◽

Vortex Flow ◽

Superconducting Films ◽

Quantum Liquid

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Slit Aspect Ratio Effect on Flow Instability and Heat Transfer Characteristics of Wavy Vortex Flow

Arabian Journal for Science and Engineering ◽

10.1007/s13369-019-03884-w ◽

2019 ◽

Vol 44 (9) ◽

pp. 7767-7777 ◽

Cited By ~ 2

Author(s):

Dong Liu ◽

Siliang Sun ◽

Shicheng Ding ◽

Nana Kofi Amponsah-Gyenin ◽

Hyoung-Bum Kim

Keyword(s):

Heat Transfer ◽

Aspect Ratio ◽

Vortex Flow ◽

Flow Instability ◽

Heat Transfer Characteristics ◽

Ratio Effect ◽

Transfer Characteristics

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Direct evidence for filamentary and channel vortex flow in Pb/In superconducting films

Physical Review B ◽

10.1103/physrevb.59.r6624 ◽

1999 ◽

Vol 59 (10) ◽

pp. R6624-R6627 ◽

Cited By ~ 15

Author(s):

M. Danckwerts ◽

A. R. Goñi ◽

C. Thomsen

Keyword(s):

Vortex Flow ◽

Direct Evidence ◽

Superconducting Films

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Local flux-flow instability in superconducting films near Tc

Physical Review B ◽

10.1103/physrevb.99.174518 ◽

2019 ◽

Vol 99 (17) ◽

Cited By ~ 13

Author(s):

Alexei I. Bezuglyj ◽

Valerij A. Shklovskij ◽

Ruslan V. Vovk ◽

Volodymyr M. Bevz ◽

Michael Huth ◽

...

Keyword(s):

Flow Instability ◽

Superconducting Films ◽

Flux Flow

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Pinning effects on self-heating and flux-flow instability in superconducting films near Tc

Physical Review B ◽

10.1103/physrevb.95.184517 ◽

2017 ◽

Vol 95 (18) ◽

Cited By ~ 9

Author(s):

Valerij A. Shklovskij ◽

Anastasiia P. Nazipova ◽

Oleksandr V. Dobrovolskiy

Keyword(s):

Flow Instability ◽

Superconducting Films ◽

Flux Flow ◽

Self Heating

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Characterization of Y-Ba-Cu-O films grown on silicon substrates by sequential evaporation

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100106399 ◽

1988 ◽

Vol 46 ◽

pp. 866-867

Author(s):

E. L. Hall ◽

A. Mogro-Campero ◽

L. G. Turner ◽

N. Lewis

Keyword(s):

Thin Film ◽

Thin Film Deposition ◽

Superconducting Films ◽

Electron Beam Evaporation ◽

Film Deposition ◽

Silicon Substrates ◽

Superconducting Properties ◽

Sequential Electron ◽

Thin Superconducting Films

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.

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