scholarly journals Study of pseudogap and superconducting quasiparticle dynamics in Bi2Sr2CaCu2O8+δ by time-resolved optical reflectivity

2020 ◽  
Vol 577 ◽  
pp. 1353710 ◽  
Author(s):  
Xu-Chen Nie ◽  
Hai-Ying Song ◽  
Xiu Zhang ◽  
Yang Wang ◽  
Qiang Gao ◽  
...  
2010 ◽  
Vol 470 ◽  
pp. S714-S715
Author(s):  
X. Xi ◽  
J. Hwang ◽  
H. Zhang ◽  
C.J. Stanton ◽  
D.H. Reitze ◽  
...  

2018 ◽  
Vol 11 (9) ◽  
pp. 095802 ◽  
Author(s):  
Xu-Chen Nie ◽  
Hai-Ying Song ◽  
Xiu Zhang ◽  
Shi-Bing Liu ◽  
Fan Li ◽  
...  

1980 ◽  
Vol 37 (11) ◽  
pp. 1019-1021 ◽  
Author(s):  
G. L. Olson ◽  
S. A. Kokorowski ◽  
R. A. McFarlane ◽  
L. D. Hess

1981 ◽  
Author(s):  
G. L. Olson ◽  
S. A. Kokorowski ◽  
J. A. Roth ◽  
R. S. Turley ◽  
L. D. Hess

1980 ◽  
Vol 1 ◽  
Author(s):  
G.L. Olson ◽  
S.A. Kokorowski ◽  
J.A. Roth ◽  
L.D. Hess

ABSTRACTWe report the use of time-resolved optical reflectivity to directly monitor the dynamics of cw laser-induced solid phase epitaxy (SPE) of thin films. This in situ measurement technique utilizes optical interference effects between light reflected from the surface of a sample and from an advancing interface to provide continuous temporal and spatial resolution of crystal growth processes. SPE growth rates of ionimplanted films which are five orders of magnitude faster than previously observed can be induced and accurately measured with the laser method. Arsenic enhances the SPE rate, and spatially resolved measurements show that the growth rate for arsenic implanted films varies in accordance with the ionimplantation profile. Results are reported for silicon selfimplanted samples with and without subsequent arsenic ion implantation, and for silicon samples directly implanted with arsenic.


2019 ◽  
Vol 12 ◽  
pp. 1089-1090 ◽  
Author(s):  
Xu-Chen Nie ◽  
Hai-Yun Liu ◽  
Xiu Zhang ◽  
Cong-Ying Jiang ◽  
Shi-Zhong Zhao ◽  
...  

1983 ◽  
Vol 29 ◽  
Author(s):  
L. Baufay ◽  
M. Wautelet ◽  
A. Pigeolet ◽  
R. Andrew

ABSTRACTThe laser-induced oxidation of 2000 Å thick cadmium films on glass substrates is studied by measuring the time-resolved reflectivity and transmission of a probe beam. Under CW laser irradiation, the thickness of the oxide layer is shown to increase linearly with time. Also, the velocity, v, of the CdO-Cd interface increases with increasing laser power, with a step when the melting point of Cd is attained. At the highest powers studied in this work, v varies as v = voexp(−a/P), with vo = 6100 Ås−1 and a=4.8 W.


2009 ◽  
Vol 603 (10-12) ◽  
pp. 1571-1578 ◽  
Author(s):  
Predrag Lazić ◽  
Damir Aumiler ◽  
Branko Gumhalter

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