The effect of the intense laser field on the intersubband transitions in Ga1−xInxNyAs1−y/GaAs single quantum well

2011 ◽  
Vol 44 (2) ◽  
pp. 515-520 ◽  
Author(s):  
F. Ungan ◽  
E. Kasapoglu ◽  
C.A. Duque ◽  
H. Sari ◽  
I. Sokmen
Keyword(s):  
Quantum Well ◽  
Laser Field ◽  
Intense Laser ◽  
Single Quantum ◽  
Intersubband Transitions ◽  
Intense Laser Field ◽  
Single Quantum Well

The effects of the intense laser field on bound states in Ga x In1- x N y As1- y N/GaAs single quantum well

2011 ◽  
Vol 80 (1) ◽  
pp. 89-93 ◽  
Author(s):  
F. Ungan ◽  
E. Kasapoglu ◽  
C. A. Duque ◽  
U. Yesilgul ◽  
S. Şakiroglu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Field ◽  
Bound States ◽  
Intense Laser ◽  
Single Quantum ◽  
Intense Laser Field ◽  
Single Quantum Well

Effect of Intense Laser Field in GaAs/AlxGa1−xAs Quantum Well

2014 ◽  
Vol 20 (3) ◽  
pp. 726-728 ◽  
Author(s):  
B. Pradhan ◽  
B. K. Panda
Keyword(s):  
Quantum Well ◽  
Laser Field ◽  
Intense Laser ◽  
Intense Laser Field

Normal incidence infrared modulator based on single quantum well intersubband transitions

2013 ◽  
Vol 47 (2) ◽  
pp. 025104 ◽  
Author(s):  
W Vandermeiren ◽  
J Stiens ◽  
G Shkerdin ◽  
C De Tandt ◽  
R Vounckx
Keyword(s):  
Quantum Well ◽  
Normal Incidence ◽  
Single Quantum ◽  
Intersubband Transitions ◽  
Single Quantum Well
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