Dependence of impurity binding energy on nitrogen and indium concentrations for shallow donors in a GaInNAs/GaAs quantum well under intense laser field

2011 ◽  
Vol 82 (3-4) ◽  
pp. 313-318 ◽  
Author(s):  
F. Ungan ◽  
E. Kasapoglu ◽  
H. Sari ◽  
I. Sökmen
Keyword(s):  
Binding Energy ◽  
Quantum Well ◽  
Laser Field ◽  
Intense Laser ◽  
Intense Laser Field ◽  
Shallow Donors

The effects of the intense laser field on bound states in Ga x In1- x N y As1- y N/GaAs single quantum well

2011 ◽  
Vol 80 (1) ◽  
pp. 89-93 ◽  
Author(s):  
F. Ungan ◽  
E. Kasapoglu ◽  
C. A. Duque ◽  
U. Yesilgul ◽  
S. Şakiroglu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Field ◽  
Bound States ◽  
Intense Laser ◽  
Single Quantum ◽  
Intense Laser Field ◽  
Single Quantum Well

Effect of Intense Laser Field in GaAs/AlxGa1−xAs Quantum Well

2014 ◽  
Vol 20 (3) ◽  
pp. 726-728 ◽  
Author(s):  
B. Pradhan ◽  
B. K. Panda
Keyword(s):  
Quantum Well ◽  
Laser Field ◽  
Intense Laser ◽  
Intense Laser Field

Intense laser field and conduction band-edge nonparabolicity effects on hydrogenic impurity states of InGaN QW

2014 ◽  
Vol 29 (02) ◽  
pp. 1450246
Author(s):  
Haddou El Ghazi
Keyword(s):  
Binding Energy ◽  
Conduction Band ◽  
Laser Field ◽  
Band Edge ◽  
Intense Laser ◽  
Conduction Band Edge ◽  
Intense Laser Field ◽  
Hydrogenic Impurity ◽  
Symmetric Quantum ◽  
Trial Wavefunction

In this paper, hydrogenic impurity ground-state binding energy in unstrained wurtzite (In, Ga)N symmetric quantum well is investigated. The heterostructure is considered under the action of an intense laser field (ILF) incorporating an additional internal probe as well as the conduction band-edge nonparabolicity effect (CBENP). The variational approach is used within the framework of single band effective-mass approximation with two-parametric 1S-hydrogenic trial wavefunction. The competition effect between internal and external perturbations is also shown. Our results reveal that the binding energy is the largest for the well width around the effective Bohr radius and is strongly influenced by both parameters. Moreover, the principle effect of ILF (CBENP) is to reduce (enhance) the binding energy. It is found that the lift of the conduction band-edge can be easily eliminated by adjusting the ILF-parameter.

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