Effect of InGaN growth interruption on photoluminescence properties of an InGaN-based multiple quantum well structure
2020 ◽
Vol 119
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pp. 113982
2013 ◽
Vol 430
◽
pp. 14-19
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2000 ◽
Vol 29
(11)
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pp. 1346-1350
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Keyword(s):
Keyword(s):
1995 ◽
Vol 182-184
◽
pp. 455-458
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Keyword(s):